BSZ070N08LS5

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BSZ070N08LS5

MOSFETs TRENCH 40<-<100V

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Spécifications

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Vue d'ensemble

Description

BSZ070N08LS5 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various electronic applications, including power management and switching. It features a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 70A, making it suitable for high-power applications. The "L" in its designation indicates a low gate threshold voltage, enhancing efficiency in switching operations.
This MOSFET has a low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation. It is often used in DC-DC converters, motor drivers, and other switching circuits where efficiency and thermal management are critical. The device is housed in a TO-220 package, which aids in heat dissipation.
Overall, BSZ070N08LS5 is favored for its performance characteristics in high-efficiency power applications, making it a popular choice among engineers and designers in the field of electronic circuitry.

Features

The BSZ070N08LS5 is a N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 80V, making it suitable for various high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 70A at a specified temperature, enabling efficient power management.
3. R_DS(on): It has a low on-resistance typically around 9.6 mΩ, allowing for reduced power losses and improved thermal performance.
4. Fast Switching: The MOSFET offers fast switching capabilities, which is beneficial for high-frequency applications like DC-DC converters.
5. Thermal Performance: With its TO-220 package, it provides effective heat dissipation, enhancing reliability in demanding environments.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is in the range of 2V to 4V, allowing for easy drive with standard logic levels.
These features make the BSZ070N08LS5 ideal for applications in power supply circuits, motor drives, and other electronic systems requiring efficient switching.

Package

The BSZ070N08LS5 is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and ease of mounting on heatsinks for effective heat dissipation.

Pinout

The BSZ070N08LS5 is an N-channel MOSFET with a pin count of 5. Its primary functions include switching and amplification in electronic circuits. The pins are typically configured as follows:
1. Gate (G) - This pin controls the MOSFET operation. A voltage applied here allows current to flow from drain to source.
2. Drain (D) - This pin is where the current exits the device; it connects to the load.
3. Source (S) - This pin is where the current enters the device, typically connected to ground in low-side switching applications.
4. Gate (G) - The second gate pin is for enhanced control, allowing for better thermal management and performance in certain configurations.
5. Source (S) - The second source pin serves similar purposes as the first, providing flexibility in layout and thermal characteristics.
This MOSFET is commonly used in power management applications, including DC-DC converters and motor drivers, due to its low on-resistance and high efficiency.

Manufacturer

The BSZ070N08LS5 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in the development and production of advanced semiconductor solutions for various applications, including automotive, industrial, and communication sectors. The company is renowned for its innovations in power management, automotive safety, and security technologies. Infineon plays a significant role in the growing market for energy-efficient solutions and smart technologies, contributing to the advancement of Internet of Things (IoT) and renewable energy systems.

Application

The BSZ070N08LS5 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and power supplies. Its low on-resistance and high efficiency make it suitable for use in automotive, industrial, and consumer electronics where space and thermal performance are critical. It can also be utilized in renewable energy systems, such as solar inverters, and battery management systems.

Equivalent

The BSZ070N08LS5 is an N-channel MOSFET. Equivalent products include:
1. STP7NK80Z
2. IRF3205
3. FQP30N06L
4. BTA10-600V
Ensure to check specifications like V_DS, I_D, R_DS(on), and package type for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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