BSS670S2LH6327

Les images sont à titre de référence seulement

BSS670S2LH6327

  • Fabricant
  • Mfr. Partie #BSS670S2LH6327
  • Paquet
  • Fiche de données
  • En stock2184

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Manufacturer Infineon Technologies
Package SOT-23
Operating Temperature -55℃~+150℃
RDS(on) 650mΩ@10V,270mA
Drain to Source Voltage 55V
Pd - Power Dissipation 360mW
Current - Continuous Drain(Id) 540mA
Reverse Transfer Capacitance (Crss@Vds) 10pF@25V
Input Capacitance(Ciss@Vds) 75pF@25V
Gate Threshold Voltage (Vgs(th)@Id) 1.6V
Gate Charge(Qg) 2.26nC@10V
Number 1 N-channel

Vue d'ensemble

Description

The BSS670S2LH6327 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It is characterized by its high efficiency, low on-resistance, and fast switching capabilities, making it suitable for various electronic devices, including power management systems, motor control, and DC-DC converters.
The device typically features a maximum drain-source voltage (V_DS) and a continuous drain current (I_D) specification that allows it to handle moderate power levels efficiently. Its compact package design aids in space-saving layouts in circuit boards.
Key specifications often include thresholds for gate-source voltage (V_GS), drain current ratings, and thermal resistance parameters, ensuring it operates reliably under specified conditions.
In summary, the BSS670S2LH6327 is a versatile and efficient N-channel MOSFET ideal for applications where low power loss and quick response times are critical.

Features

The BSS670S2LH6327 is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Low On-Resistance: Offers low R_DS(on) values, ensuring minimal power loss during operation.
2. High Voltage Rating: Typically supports drain-source voltages up to 60V, suitable for various applications.
3. Current Handling: Capable of handling significant continuous drain current, enhancing its performance in demanding environments.
4. Fast Switching Times: Allows for quick turn-on and turn-off, which is beneficial in high-frequency applications.
5. Thermal Stability: Designed to operate effectively within a wide temperature range, ensuring reliability in diverse conditions.
6. Package Type: Available in surface-mount packages, facilitating easy integration into compact designs.
This MOSFET is ideal for power management, motor control, and various switching applications in consumer electronics and industrial systems.

Package

The BSS670S2LH6327 is packaged in a SOT-23 form factor, which is a small, surface-mount package commonly used for transistors.

Pinout

The BSS670S2LH6327 is a N-channel MOSFET with a pin count of 4. The typical functions of its pins are as follows:
1. Gate (G): This pin controls the MOSFET's switching action. A voltage applied here allows current to flow from drain to source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S): This pin is where the current exits the MOSFET. In N-channel MOSFETs, it is typically connected to ground.
4. Body Diode: While not a pin, the device includes an intrinsic body diode that allows current to flow from the source to the drain when the MOSFET is off.
For detailed specifications like maximum voltage and current ratings, refer to the manufacturer's datasheet.

Manufacturer

The BSS670S2LH6327 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in high-performance semiconductor devices and is known for producing discrete, logic, and analog integrated circuits. The company focuses on providing high-quality products for various applications, including automotive, industrial, and consumer electronics. Nexperia was formed from the NXP Semiconductors' Standard Products division in 2017 and has established itself as a key player in the semiconductor industry, emphasizing efficiency, reliability, and sustainability in its manufacturing processes.

Application

The BSS670S2LH6327 is a N-channel MOSFET primarily used in switching applications. Its applications include power management in power supplies, DC-DC converters, motor control, and load switching in automotive and industrial systems. Additionally, it is suitable for low-voltage applications in consumer electronics and battery-powered devices.

Equivalent

The BSS670S2LH6327 is a N-channel MOSFET. Equivalent products include the BSS670, BSS670N, and 2N7000. Make sure to check specifications such as voltage, current ratings, and package types to ensure compatibility in your specific application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire