BSS63LT1G

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BSS63LT1G

TRANS PNP 100V 0.1A SOT23-3

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Spécifications

Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 100 mA
Voltage-CollectorEmitterBreakdown(Max) 100 V
VceSaturation(Max)@IbIc 250mV @ 2.5mA, 25mA
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 30 @ 25mA, 1V
Power-Max 225 mW
Frequency-Transition 95MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

The BSS63LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 9.2A. This device is suitable for use in various applications such as power management, switching, and signal amplification.
Key characteristics include low on-resistance (R_DS(on)) for efficient energy performance, fast switching speeds, and a compact surface-mount package (SOT-23). The BSS63LT1G is commonly used in consumer electronics, automotive, and industrial applications due to its reliability and efficiency. Its versatility makes it suitable for tasks like load switching and driving small motors or relays.
Overall, the BSS63LT1G is a practical choice for designers seeking a robust and efficient MOSFET for low-voltage applications.

Features

The BSS63LT1G is an N-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 4.2A, allowing for efficient power handling.
3. Low On-Resistance: R_DS(on) is typically around 0.65Ω at V_GS of 10V, which minimizes power losses during operation.
4. Fast Switching Speed: High-speed operation suitable for switching applications, enhancing efficiency.
5. Small Package: Available in a SOT-23 package, allowing for space-saving designs in PCB layouts.
6. Thermal Performance: Features a low thermal resistance, which helps in managing heat during operation.
Overall, the BSS63LT1G is ideal for use in power management, motor control, and general-purpose switching applications.

Package

The BSS63LT1G is packaged in a SOT-23 surface mount package.

Pinout

The BSS63LT1G is a N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Drain (D) - The terminal through which the current exits the MOSFET when it is turned on.
3. Source (S) - The terminal where current enters the MOSFET.
The BSS63LT1G is commonly used in low-voltage applications and is suitable for switching and amplifying signals. It is characterized by low on-resistance and fast switching speeds, making it ideal for various electronic circuits, including power management and signal routing.

Manufacturer

The BSS63LT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in providing a wide range of products including power management, analog, sensor, logic, timing, interface, discrete, and custom solutions. The company serves various industries such as automotive, industrial, communication, consumer electronics, and more, focusing on energy efficiency and innovative technologies. ON Semiconductor was formed through the merger of several companies and has a significant presence in the semiconductor market, emphasizing sustainability and advanced manufacturing processes.

Application

The BSS63LT1G is an N-channel MOSFET primarily used in low-voltage applications such as power management, switching, and amplification. Its typical applications include signal switch circuits, load switching, and power routing in battery-operated devices, portable electronics, and automotive systems. The device is favored for its low on-resistance, efficient power handling, and high-speed switching capabilities.

Equivalent

The BSS63LT1G is a N-channel MOSFET commonly used in low-voltage applications. Equivalent products include the 2N7000, BS170, and IRF3708. For specific applications, consider the ZXMN2A08E6 or the SI2302. Always verify specifications like V_DS, I_D, and R_DS(on) when selecting an equivalent.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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