BSS138LT3G

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BSS138LT3G

MOSFET N-CH 50V 200MA SOT23-3

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Spécifications

Supplier onsemi,Flip Electronics,Rochester Electronics, LLC
Package Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 50 V
Current-ContinuousDrain(Id)@25°C 200mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 3.5Ohm @ 200mA, 5V
Vgs(th)(Max)@Id 1.5V @ 1mA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 50 pF @ 25 V
PowerDissipation(Max) 225mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The BSS138LT3G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) rating of 220mA. The device is commonly used in switching applications, amplifiers, and digital circuits due to its fast switching speeds and low on-resistance (R_DS(on)), which minimizes power loss.
The BSS138LT3G is housed in a small SOT-23 package, making it suitable for compact designs. Its gate threshold voltage (V_GS(th)) typically ranges from 1.3V to 2.5V, facilitating operation with low control voltages. The device is well-suited for use in battery-powered applications, and its robust performance ensures reliability in various electronic circuits.
Overall, the BSS138LT3G is an efficient choice for engineers looking to implement reliable MOSFET solutions in space-constrained designs.

Features

The BSS138LT3G is an N-channel MOSFET designed for low-voltage and low-power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various switching applications.
2. Current Rating: The continuous drain current (I_D) is up to 220 mA, facilitating efficient operation in low-power devices.
3. On-Resistance: The R_DS(on) is typically around 3.5 ohms at a gate-source voltage (V_GS) of 10V, ensuring low conduction losses.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for operation with low gate drive voltages.
5. Package Type: It is available in a SOT-23 package, which is compact and suitable for space-constrained applications.
6. Applications: Commonly used in switching power supplies, LED drivers, and low-voltage motor control.
Overall, the BSS138LT3G is an efficient choice for designers looking for reliability and performance in compact electronic systems.

Package

The BSS138LT3G is typically packaged in a SOT-23 surface mount package.

Pinout

The BSS138LT3G is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the operation of the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.

2. Drain (D): This pin is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S): This pin is where the current exits the MOSFET. In typical applications, it is connected to ground in low-side switching configurations.
The BSS138LT3G is commonly used in switching applications, low power amplification, and signal processing due to its low on-resistance and fast switching characteristics.

Manufacturer

The manufacturer of the BSS138LT3G is ON Semiconductor. ON Semiconductor is a global semiconductor supplier that provides a broad range of products, including analog, digital, and mixed-signal semiconductor solutions. The company is known for its focus on energy-efficient technologies and serves various markets, including automotive, industrial, and consumer electronics. ON Semiconductor plays a significant role in the semiconductor industry, offering components for power management, sensor integration, and connectivity solutions.

Application

The BSS138LT3G is an N-channel MOSFET commonly used in low-voltage applications such as switching circuits, level shifting, and signal amplification. It is suitable for use in power management, LED drivers, and motor control due to its low on-resistance and fast switching capabilities. Additionally, it finds applications in battery-powered devices, consumer electronics, and computer peripherals, where efficient power handling is essential.

Equivalent

Equivalent products to the BSS138LT3G include the 2N7000, 2N7002, BS170, and 2N7001 MOSFETs. These alternatives share similar specifications, including low gate thresholds and suitable for low-power switching applications. Always verify specific parameters like VDS, ID, and RDS(on) to ensure compatibility for your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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