BSS123LT1G

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BSS123LT1G

MOSFET N-CH 100V 170MA SOT23-3

  • Fabricant
  • Mfr. Partie #BSS123LT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock6163

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 170mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6Ohm @ 100mA, 10V
Vgs(th)(Max)@Id 2.6V @ 1mA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 20 pF @ 25 V
PowerDissipation(Max) 225mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

BSS123LT1G is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It is designed for use in various electronic applications, such as power management, switching, and amplification. Key features of the BSS123LT1G include its low on-resistance, high-speed switching capabilities, and compact package design, making it suitable for space-constrained applications. The device typically operates with a maximum drain-source voltage of around 60V and a continuous drain current of approximately 1.6A at room temperature. Its gate threshold voltage is low, allowing for efficient control in low-voltage circuits. Common applications include power supplies, motor drivers, and signal switching. The BSS123LT1G is often used in consumer electronics and other automated systems where reliability and efficiency are critical. Ensure to refer to the datasheet for detailed specifications and application guidelines.

Features

The BSS123LT1G is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Handling: The continuous drain current (I_D) is rated at 6A, allowing it to handle significant loads.
3. Low On-Resistance: The typical on-resistance (R_DS(on)) is low, around 0.1 ohms at V_GS = 10V, which helps minimize power loss and improves efficiency.
4. Fast Switching: Optimized for fast switching applications, improving overall system performance in switching power supplies and motor controls.
5. Package Type: It comes in a small SOT-23 package, enhancing space efficiency in circuit designs.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for easy drive with low voltage levels.
Overall, the BSS123LT1G is ideal for compact and efficient electronic designs requiring reliable switching performance.

Package

The BSS123LT1G is packaged in a SOT-23 (Small Outline Transistor) format. This compact package is commonly used for surface-mount applications.

Pinout

The BSS123LT1G is an N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching behavior.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to ground or the lower potential in the circuit.
The BSS123LT1G is commonly used for low-voltage applications, including switching and amplification in electronic circuits. It features a low on-resistance and fast switching times, making it suitable for various applications such as load switching and signal processing.

Manufacturer

The BSS123LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including analog, power management, logic, discrete, and custom devices. The company serves various markets such as automotive, industrial, telecommunications, consumer electronics, and computing. Founded in 1999, ON Semiconductor has grown through both organic development and acquisitions, positioning itself as a key player in the semiconductor industry. Their products are used in numerous applications, from automotive electronics to energy-efficient solutions, reflecting their commitment to innovation and sustainability.

Application

The BSS123LT1G is an N-channel MOSFET used in various applications including power management, switching regulators, and motor control. It is suitable for low-voltage and low-power applications like battery-operated devices, portable electronics, and LED drivers. Its compact size and efficiency make it ideal for switching tasks in consumer electronics and automotive applications.

Equivalent

The BSS123LT1G is an N-channel MOSFET. Equivalent products include the 2N7000, 2N7002, and BS170. Other similar options are the BSS123 (non-G suffix) and the IRLML2502. Always check specifications such as V_DS, I_D, and R_DS(on) for compatibility.

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