BSC520N15NS3G

Les images sont à titre de référence seulement

BSC520N15NS3G

  • Fabricant
  • Mfr. Partie #BSC520N15NS3G
  • Paquet
  • Fiche de données
  • En stock3786

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Manufacturer Infineon Technologies
Package TDSON-8-EP(5x6)
Operating Temperature -55℃~+150℃
RDS(on) 52mΩ@10V,18A
Drain to Source Voltage 150V
Pd - Power Dissipation 57W
Current - Continuous Drain(Id) 21A
Reverse Transfer Capacitance (Crss@Vds) 3.4pF@75V
Input Capacitance(Ciss@Vds) 890pF
Type 1 N-channel
Gate Threshold Voltage (Vgs(th)@Id) 2V
Gate Charge(Qg) 12nC@10V

Vue d'ensemble

Description

BSC520N15NS3G is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance, which allows for efficient current conduction and reduced heat generation, making it suitable for use in power supplies, motor control, and other applications requiring efficient switching.
Key specifications include a maximum drain-source voltage (V_DS) of 150V, a continuous drain current (I_D) of up to 52A, and a gate threshold voltage (V_GS(th)) typically ranging from 2V to 4V. The device is housed in a DPAK package, providing good thermal performance and ease of integration into circuit designs.
Overall, BSC520N15NS3G is ideal for designers seeking reliable and efficient MOSFETs for high-voltage applications, contributing to improved energy efficiency and performance in electronic systems.

Features

The BSC520N15NS3G is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Typically rated for 150V, suitable for high-voltage applications.
2. Current Rating: Supports continuous drain currents up to 52A, allowing for robust performance in demanding scenarios.
3. Rds(on): Low on-resistance (around 0.018Ω) results in reduced conduction losses, enhancing efficiency.
4. Thermal Performance: Capable of handling high temperatures with a maximum junction temperature of 175°C.
5. Gate Threshold Voltage: Designed for low gate drive voltages, enabling easy interfacing with microcontrollers and other low-voltage devices.
6. Package Type: Available in a DPAK package, facilitating easy mounting and heat dissipation.
These features make the BSC520N15NS3G ideal for applications in power management, motor control, and DC-DC converters where efficiency and thermal performance are critical.

Package

The BSC520N15NS3G is packaged in a TO-220 form factor, which is a type of package commonly used for power devices. It features three leads and provides efficient heat dissipation, making it suitable for high-power applications.

Pinout

The BSC520N15NS3G is a MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Infineon Technologies. It features a total of 5 pins. The primary functions of these pins are as follows:
1. Gate (G) - Controls the switching of the MOSFET; it is used to turn the device on and off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET.
3. Source (S) - The terminal through which current enters the MOSFET.
The BSC520N15NS3G is typically used in power management applications, including DC-DC converters and motor drivers, due to its high efficiency and low on-resistance. Always refer to the specific datasheet for detailed pin assignments and operational characteristics.

Manufacturer

The BSC520N15NS3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power semiconductors, microcontrollers, sensors, and more, focusing on energy efficiency, mobility, and security solutions. Infineon serves a diverse range of industries and is recognized as a leading provider of semiconductor products globally.

Application

The BSC520N15NS3G is a power MOSFET primarily used in applications such as automotive systems, industrial motor drives, power supplies, and DC-DC converters. Its features make it suitable for high-efficiency switching applications, including battery management systems and renewable energy systems. The device's fast switching capability and low on-resistance enhance performance in power electronic circuits.

Equivalent

The BSC520N15NS3G chip is a N-channel MOSFET. Equivalent products include the IRF3205, STP45NF15, and FQP50N15. Always verify specifications like voltage, current ratings, and RDS(on) before substituting.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire