BSC070N10NS3G

Les images sont à titre de référence seulement

BSC070N10NS3G

  • Fabricant
  • Mfr. Partie #BSC070N10NS3G
  • Paquet
  • Fiche de données
  • En stock2673

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Manufacturer Infineon Technologies
Package TDSON-8-EP(5x6)
RDS(on) 7mΩ@10V,50A
Drain to Source Voltage 100V
Pd - Power Dissipation 114W
Current - Continuous Drain(Id) 90A
Gate Threshold Voltage (Vgs(th)@Id) 3.5V
Number 1 N-channel

Vue d'ensemble

Description

BSC070N10NS3G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. This device features a low on-resistance (R_DS(on)), which allows for efficient power switching and minimizes energy loss during operation. It typically supports a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 70A, making it suitable for high-power applications like DC-DC converters, motor drives, and power management systems.
The MOSFET is packaged in an efficient TO-220 format, which aids in heat dissipation, a critical factor in high-current applications. Its gate threshold voltage (V_GS(th)) allows it to be driven easily with standard logic level signals. Overall, the BSC070N10NS3G is valued for its reliability, performance, and thermal efficiency, making it a preferred choice among engineers for designing robust electronic circuits.

Features

The BSC070N10NS3G is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 70A, allowing it to drive high loads efficiently.
3. R_DS(on): The on-resistance is low, typically around 10mΩ, which minimizes power losses during operation.
4. Gate Charge: It has a moderate gate charge (Q_g), enabling fast switching speeds, ideal for high-frequency applications.
5. Package: Available in a TO-220 package, which aids in heat dissipation and easy mounting.
6. Thermal Resistance: It features low thermal resistance, enhancing performance under high load conditions.
7. Applications: Commonly used in DC-DC converters, motor drivers, and other power management systems.
These attributes make the BSC070N10NS3G suitable for demanding electronic circuit environments where efficiency and reliability are critical.

Package

The BSC070N10NS3G is packaged in a TO-220 format.

Pinout

The BSC070N10NS3G is an N-channel MOSFET primarily used in power management applications. It has a total of 5 pins, which are configured as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S) - The terminal through which the current enters the MOSFET.
The BSC070N10NS3G is designed for high efficiency and low on-resistance, making it suitable for applications like DC-DC converters, power supplies, and motor drives. It can handle a maximum drain-source voltage of 100V and a continuous drain current of 70A. Be sure to refer to the datasheet for specific electrical characteristics and thermal performance.

Manufacturer

The manufacturer of the BSC070N10NS3G is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Germany, specializing in various sectors, including automotive, industrial power control, and security. The company develops products that enhance energy efficiency and provide innovative solutions for a wide range of applications, from automotive systems to renewable energy and smart grid technologies. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensor technologies.

Application

The BSC070N10NS3G is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor drives, power inverters, and switching power supplies. It is suitable for automotive, industrial, and consumer electronics due to its high efficiency, low on-resistance, and fast switching capabilities.

Equivalent

The BSC070N10NS3G is a 100V N-channel MOSFET from Infineon. Equivalent products include:
1. IRF3205 (International Rectifier)
2. STP75NF75 (STMicroelectronics)
3. FQP75N06L (Fairchild Semiconductor)
4. AOD320 (Alpha & Omega Semiconductor)
Always verify specifications like RDS(on), VDS, and package type for compatibility in your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire