BSC067N06LS3G

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BSC067N06LS3G

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Spécifications

Manufacturer Infineon Technologies
Package TDSON-8-EP(5x6)
Operating Temperature -55℃~+150℃
RDS(on) 6.7mΩ@10V,50A
Drain to Source Voltage 60V
Pd - Power Dissipation 69W
Current - Continuous Drain(Id) 50A
Reverse Transfer Capacitance (Crss@Vds) 940pF@30V
Input Capacitance(Ciss@Vds) 5.1nF
Gate Threshold Voltage (Vgs(th)@Id) 2.2V
Gate Charge(Qg) 30nC@10V
Number 1 N-channel

Vue d'ensemble

Description

BSC067N06LS3G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications for switching and amplification. Specifically, it is an N-channel enhancement-mode MOSFET, which means it conducts when a positive voltage is applied to the gate relative to the source.
Key features typically include a low on-resistance, high-speed switching capability, and suitability for high-voltage applications. It is commonly used in power management systems, such as DC-DC converters, motor drivers, and other circuits requiring efficient control of electrical power.
The device is housed in a compact package that facilitates easy integration into electronic circuits. In addition to its electrical characteristics, its performance is influenced by parameters like gate threshold voltage, maximum drain-source voltage, and continuous drain current.
Overall, BSC067N06LS3G is an essential component for modern electronic designs requiring reliable power management and efficient operation.

Features

The BSC067N06LS3G is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 67A, allowing it to manage substantial loads.
3. Low On-Resistance: With a typical R_DS(on) of around 6.7 mΩ at a gate-source voltage (V_GS) of 10V, it offers low conduction losses, improving efficiency.
4. Fast Switching: The MOSFET supports rapid switching speeds, making it ideal for high-frequency applications.
5. Thermal Performance: It features a low thermal resistance, enhancing its heat dissipation capabilities.
6. Package Type: Typically available in a TO-220 package, facilitating good thermal management and ease of mounting.
These attributes make the BSC067N06LS3G suitable for use in switch-mode power supplies, motor drives, and other high-efficiency power applications.

Package

The BSC067N06LS3G is packaged in a TO-220 form factor. This type of package features a metal tab for heat dissipation and allows for efficient mounting on heatsinks, making it suitable for power applications.

Pinout

The BSC067N06LS3G is an N-channel MOSFET manufactured by Infineon Technologies. It features a pin count of 4, with the following functions:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. Current flows from the source to the drain when the device is activated.
4. Body (B): The body diode is inherent in the MOSFET structure, providing a path for reverse current.
This device is designed for applications requiring efficient power management, such as in DC-DC converters and motor drives. Its low on-resistance helps reduce power loss during operation.

Manufacturer

The BSC067N06LS3G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in various sectors including automotive, industrial power control, and security technologies. Infineon is well-known for producing a range of products such as power semiconductors, microcontrollers, and sensors. The BSC067N06LS3G is a N-channel MOSFET, typically used in power management applications, showcasing Infineon's focus on high-performance and efficient electronic components.

Application

The BSC067N06LS3G is a N-channel MOSFET primarily used in power management applications. It is suitable for DC-DC converters, power supplies, motor drives, and various switching applications due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in consumer electronics, automotive systems, and renewable energy systems like solar inverters.

Equivalent

The BSC067N06LS3G is an N-channel MOSFET from Infineon. Equivalent products may include:
1. STP06NF06L (STMicroelectronics)
2. IRF540 (Infineon)
3. AO3400 (Alpha & Omega Semiconductor)
4. SiHF100N06 (Vishay)
Always verify specific parameters like Vds, Id, and Rds(on) for compatibility.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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