BSC060N10NS3 G

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BSC060N10NS3 G

MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 3

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Standard Pack Qty 5000

Vue d'ensemble

Description

The BSC060N10NS3 G is a high-performance N-channel MOSFET designed for various power management applications. With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 60A, it is well-suited for switching and amplification tasks in power supplies, motor drives, and converters. This MOSFET features a low on-resistance (R_DS(on)), which minimizes conduction losses, enhancing overall efficiency.
It is packaged in a TO-220 configuration, allowing for easy heat dissipation, making it ideal for applications requiring robust thermal performance. The device is characterized by fast switching speeds, making it suitable for high-frequency applications. Additionally, the BSC060N10NS3 G is designed to be reliable and durable, meeting stringent industry standards.
Overall, this MOSFET is an excellent choice for engineers looking to implement efficient and reliable power solutions in their designs.

Features

The BSC060N10NS3 G is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 60A, allowing for robust performance in high-current applications.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 10mΩ, which minimizes conduction losses and improves overall efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, ensuring compatibility with low-voltage drive circuits.
5. Package Type: The MOSFET is typically housed in a TO-220 package, providing adequate thermal performance and ease of mounting.
These features make the BSC060N10NS3 G suitable for use in power supplies, motor drives, and other applications requiring efficient power management.

Package

The BSC060N10NS3 G is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power devices in various applications.

Pinout

The BSC060N10NS3 G is a N-channel MOSFET designed for high-efficiency applications. It features a TO-220 package with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The main current-carrying terminal that connects to the load.
3. Source (S) - Connected to the ground or negative terminal of the power supply.
This MOSFET is optimized for low on-resistance and high-speed switching, making it suitable for power management and conversion applications.

Manufacturer

The BSC060N10NS3 G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. Infineon is known for its innovation in power electronics, microcontrollers, and sensors, catering to various industries such as automotive, industrial automation, and consumer electronics. The BSC060N10NS3 G is a specific type of MOSFET (metal-oxide-semiconductor field-effect transistor) used in power applications, highlighting Infineon's focus on high-performance semiconductor solutions.

Application

The BSC060N10NS3 G is a N-channel MOSFET primarily used in power management applications, such as DC-DC converters, power supplies, and motor control. It is suitable for high-efficiency switching applications, including inverters for renewable energy systems, electric vehicles, and industrial automation. Its low on-resistance and fast switching capabilities make it ideal for energy-efficient designs.

Equivalent

The BSC060N10NS3 G is a N-channel MOSFET from Infineon, typically used in power applications. Equivalent products include the IRF1010E (Vishay), AOD6N10 (Alpha & Omega), and FDB7030 (ON Semiconductor). Always check specific parameters like V_DS, I_D, R_DS(on), and package type for compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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