BSC057N08NS3G

Les images sont à titre de référence seulement

BSC057N08NS3G

  • Fabricant
  • Mfr. Partie #BSC057N08NS3G
  • Paquet
  • Fiche de données
  • En stock6556

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Manufacturer Infineon Technologies
Package TDSON-8-EP(5x6)
Operating Temperature -55℃~+150℃
RDS(on) 5.7mΩ@10V,50A
Drain to Source Voltage 80V
Pd - Power Dissipation 114W
Current - Continuous Drain(Id) 100A
Reverse Transfer Capacitance (Crss@Vds) 1000pF@40V
Input Capacitance(Ciss@Vds) 3.9nF@40V
Type 1 N-channel
Gate Threshold Voltage (Vgs(th)@Id) 3.5V
Gate Charge(Qg) 56nC@10V

Vue d'ensemble

Description

BSC057N08NS3G is a part number for a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. This component is designed for high-efficiency power switching applications, commonly used in power management systems, automotive, and industrial applications.
The “BSC” prefix indicates it belongs to a family of MOSFETs optimized for low on-resistance and high-speed switching, contributing to reduced energy losses and improved thermal performance. The “057” signifies the maximum drain-source voltage, while “N08” indicates the maximum current rating.
The “NS” in the designation typically denotes the package type and design, while “3G” indicates the generation of technology, which often includes enhancements in performance and efficiency.
Overall, BSC057N08NS3G is suitable for applications requiring reliable and efficient power control, such as in DC-DC converters, motor drives, and other power electronics.

Features

The BSC057N08NS3G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source breakdown voltage (V_DS) of 80V and a continuous drain current (I_D) of up to 57A.
2. R_DS(on): It offers a low on-state resistance (R_DS(on)) typically around 9.7 mΩ, which minimizes power loss during operation.
3. Fast Switching: The device supports high-speed switching, making it suitable for applications like DC-DC converters and motor drives.
4. Thermal Performance: The MOSFET features a high thermal stability and can handle significant power dissipation, making it ideal for use in high-temperature environments.
5. Package Type: It is typically available in a TO-220 or similar package, facilitating efficient heat dissipation and ease of mounting.
These characteristics make the BSC057N08NS3G suitable for various applications in automotive, industrial, and consumer electronics.

Package

The BSC057N08NS3G is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs, making it suitable for applications requiring high power handling.

Pinout

The BSC057N08NS3G is an N-channel MOSFET with a total of 5 pins. Its primary functions include switching and amplification in various electronic circuits. The pin configuration typically includes:
1. Gate (G): Controls the MOSFET's operation, turning it on or off.
2. Drain (D): The terminal where the load connects; current flows from drain to source when the device is on.
3. Source (S): The terminal connected to ground or the negative side of the circuit.
This MOSFET is designed for high efficiency and is often used in power management applications, including DC-DC converters, motor drives, and other switching applications. Its features include low on-resistance and high-speed switching capabilities, making it suitable for various high-performance applications.

Manufacturer

The BSC057N08NS3G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and security technologies. The company focuses on applications in various sectors, such as automotive, industrial, and consumer electronics. Infineon is known for its innovation in power management and energy efficiency, contributing to advancements in renewable energy and electric vehicles.

Application

The BSC057N08NS3G is an N-channel MOSFET primarily used in power management applications. Key areas include DC-DC converters, motor control, and power supplies in industrial and consumer electronics. Its low on-resistance and fast switching capabilities make it suitable for efficient energy conversion, battery management systems, and automotive applications.

Equivalent

The BSC057N08NS3G is a N-channel MOSFET. Equivalent products include the IRF3205, FQP50N06, and STP50NF06. Ensure to check parameters like voltage rating, current rating, and RDS(on) to confirm suitability for your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire