BSC047N08NS3 G

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BSC047N08NS3 G

MOSFETs N-Ch 80V 100A TDSON-8 OptiMOS 3

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Spécifications

Packaging MouseReel
Standard Pack Qty 5000

Vue d'ensemble

Description

BSC047N08NS3 G is a specific model of a power semiconductor device, typically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It is commonly used in power management tasks, such as in power supplies, motor control, and other electronic circuits requiring high-speed switching capabilities.
Key specifications often include a maximum drain-source voltage (V_DS), continuous drain current (I_D), and R_DS(on) values, which indicate the resistance when the device is in the 'on' state. The "G" at the end of the model number may denote specific packaging or feature enhancements.
When selecting components like the BSC047N08NS3 G, important considerations include thermal management, switching frequency, and application-specific requirements, such as efficiency and reliability under varying load conditions. Overall, this component is critical for engineers aiming to design energy-efficient electronic systems.

Features

The BSC047N08NS3 G is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for various power management tasks.
2. Current Rating: The continuous drain current (I_D) is rated at 47A, allowing it to handle significant loads.
3. R_DS(on): It boasts a low on-resistance of about 3.5 mΩ at V_GS of 10V, reducing conduction losses and improving thermal performance.
4. Thermal Resistance: The device provides good thermal management, aiding in reliable operation in demanding environments.
5. Fast Switching: It supports rapid switching speeds, beneficial for applications like DC-DC converters and motor drives.
6. Package: Available in a TO-220 package, it allows for easier heat dissipation and installation.
Overall, the BSC047N08NS3 G is ideal for power electronics where efficiency and reliability are paramount.

Package

The BSC047N08NS3 G is typically packaged in a DPAK (TO-252) or similar surface-mount package. This compact form factor is designed for efficient heat dissipation and is suitable for power applications. Always verify with the manufacturer's datasheet for specific package details.

Pinout

The BSC047N08NS3 G is a N-channel MOSFET designed for power applications. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is where the output current flows out when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The BSC047N08NS3 G is optimized for high efficiency and low on-resistance, making it suitable for applications such as power management and DC-DC converters. Its compact size and efficient performance make it a popular choice for various electronic circuits.

Manufacturer

The BSC047N08NS3 G is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon is headquartered in Neubiberg, Germany, and specializes in providing a wide range of products, including power semiconductors, sensors, microcontrollers, and security solutions. The company focuses on various sectors such as automotive, industrial, and communication technologies, emphasizing energy efficiency and sustainability in its offerings. Infineon is known for its innovation in power management and is a key player in the semiconductor industry, contributing to advancements in energy-saving technologies and smart systems.

Application

The BSC047N08NS3 G is a MOSFET commonly used in power supply applications, including DC-DC converters, motor drives, and power management circuits. Its low on-resistance and fast switching capabilities make it suitable for energy-efficient designs in consumer electronics, automotive applications, and renewable energy systems such as solar inverters. Additionally, it's utilized in lighting applications for efficient control of LED drivers.

Equivalent

The BSC047N08NS3 G is a N-channel MOSFET. Equivalent products include the IRF3205, FDS667N, and STP75NF75, which have similar specifications in terms of voltage and current ratings. Always verify electrical characteristics to ensure compatibility for your specific application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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