BSC035N10NS5ATMA1

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BSC035N10NS5ATMA1

MOSFET N-CH 100V 100A TDSON

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 3.5mOhm @ 50A, 10V
Vgs(th)(Max)@Id 3.8V @ 115µA
GateCharge(Qg)(Max)@Vgs 87 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6500 pF @ 50 V
PowerDissipation(Max) 2.5W (Ta), 156W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TDSON-8-7

Vue d'ensemble

Description

The BSC035N10NS5ATMA1 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) produced by Infineon Technologies. It is designed for power management applications, featuring low on-resistance and high-speed switching capabilities. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 35A, it is suitable for various applications, including power converters, motor drives, and automotive systems.
The device is housed in a TO-220 package, which allows for efficient thermal management. Its low gate threshold voltage enables improved efficiency in switching operations, making it ideal for applications where power loss needs to be minimized. Additionally, the BSC035N10NS5ATMA1 offers robust performance under high thermal and electrical stress conditions, ensuring reliability in demanding environments. Overall, this MOSFET is a versatile component for engineers seeking efficient power solutions.

Features

The BSC035N10NS5ATMA1 is a N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 35A, allowing for significant power handling capabilities.
3. On-Resistance (R_DS(on)): The on-resistance is low, typically around 5.5 mΩ at V_GS = 10V, minimizing conduction losses.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 1V to 3V, ensuring it can be driven by standard logic levels.
5. Package: It comes in a TO-220 package, which provides good thermal performance and ease of mounting for heat dissipation.
6. Fast Switching: The device supports fast switching speeds, enhancing efficiency in power conversion applications.
These features make the BSC035N10NS5ATMA1 suitable for use in power supplies, motor drives, and other high-efficiency power management systems.

Package

The BSC035N10NS5ATMA1 is packaged in a surface-mount type, specifically in a TO-220 package. This package type is designed for efficient thermal management and is suitable for power applications.

Pinout

The BSC035N10NS5ATMA1 is a N-channel MOSFET manufactured by Infineon Technologies. It has a total of 5 pins. The primary functions of these pins are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows the device to conduct between the drain and source.
2. Drain (D) - This pin is where the current enters the MOSFET when it is in the ON state.
3. Source (S) - This is the pin through which current exits the MOSFET when it is conducting.
The other two pins typically serve as additional connection points for the package and may include the substrate connection or other functionalities depending on the specific package type. Always refer to the specific datasheet for detailed pin configuration and electrical characteristics.

Manufacturer

The BSC035N10NS5ATMA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing semiconductor and system solutions for various applications, including automotive, industrial power control, and security technologies. Infineon is known for its innovations in power semiconductors, microcontrollers, and sensors, serving a wide range of industries such as automotive, consumer electronics, and renewable energy.

Application

BSC035N10NS5ATMA1 is an N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drives, and battery management systems. Its low on-resistance and high-speed switching capabilities make it suitable for energy-efficient designs in consumer electronics, automotive systems, and industrial equipment.

Equivalent

The BSC035N10NS5ATMA1 is a MOSFET from Infineon. Equivalent products include the IRF3205, STP55NF06, and FQP50N06. Always verify specifications such as voltage, current ratings, and on-resistance to ensure compatibility for your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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