BSC028N06NSATMA1

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BSC028N06NSATMA1

MOSFET N-CH 60V 23A/100A TDSON

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Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 23A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 2.8mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2.8V @ 50µA
GateCharge(Qg)(Max)@Vgs 37 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2700 pF @ 30 V
PowerDissipation(Max) 2.5W (Ta), 83W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TDSON-8-7

Vue d'ensemble

Description

BSC028N06NSATMA1 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It is designed for applications requiring efficient power management, such as in switch-mode power supplies, motor drivers, and other high-frequency switching applications. This MOSFET features low on-resistance and fast switching capabilities, making it suitable for various electronic circuits.
The "BSC" prefix indicates it is part of a series designed for broad applications in consumer and industrial electronics. The "N" signifies it is an N-channel MOSFET, which means it allows current to flow when a positive voltage is applied to its gate. The specific part number includes details about its voltage and current ratings, making it important for engineers to select the appropriate component for their designs.
In summary, BSC028N06NSATMA1 is an efficient N-channel MOSFET used in high-performance applications for effective power management and switching.

Features

The BSC028N06NSATMA1 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, suitable for medium voltage applications.
2. Continuous Drain Current: Capable of handling up to 28A of continuous drain current, making it ideal for high-current applications.
3. Low RDS(on): The on-resistance (RDS(on)) is low, typically around 9.5 mΩ, which helps minimize conduction losses and improve efficiency.
4. Fast Switching Speed: Designed for high-speed switching, enhancing performance in applications like DC-DC converters.
5. Thermal Performance: It features a TO-220 package that allows for better heat dissipation, critical for maintaining performance under load.
6. Gate Threshold Voltage: It has a gate threshold voltage (VGS(th)) ranging from 2 to 4V, facilitating easy drive with low-voltage logic.
These features make the BSC028N06NSATMA1 suitable for power supplies, motor control, and industrial applications.

Package

The BSC028N06NSATMA1 is packaged in a TO-220 housing. This package type is known for its excellent thermal performance and is commonly used for power devices.

Pinout

The BSC028N06NSATMA1 is a N-channel MOSFET with a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET; receives the input signal to turn the device on or off.
2. Drain (D): The terminal through which the current flows out when the MOSFET is in the on state.
3. Source (S): The terminal through which the current enters when the device is conducting.
The MOSFET is designed for high efficiency and low on-resistance, making it suitable for power switching applications. It can handle high voltage and current levels, which makes it ideal for automotive and industrial applications.
Always refer to the specific datasheet for detailed electrical characteristics and thermal performance to ensure proper application and functioning.

Manufacturer

The BSC028N06NSATMA1 is manufactured by Infineon Technologies AG. Infineon is a semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in a wide range of products, including microcontrollers, sensors, and power semiconductors, which are used in various applications such as automotive, industrial, and consumer electronics. Infineon is known for its innovations in power management, enabling efficient energy use across different sectors.

Application

The BSC028N06NSATMA1 is a N-channel MOSFET primarily used in power management applications, such as DC-DC converters, power supplies, and motor drivers. Its low on-resistance and fast switching capabilities make it suitable for energy-efficient designs in consumer electronics, industrial equipment, and automotive systems. Additionally, it can be utilized in load switching and power distribution applications due to its high current handling capacity.

Equivalent

The BSC028N06NSATMA1 is an N-channel MOSFET. Equivalent products include the IRF3205, STP55NF06L, and FDS6682N. Always verify specific parameters such as voltage ratings, current capacity, and RDS(on) to ensure compatibility for your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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