BSC014N04LSIATMA1

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BSC014N04LSIATMA1

MOSFET N-CH 40V 31A/100A TDSON

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Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 31A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.45mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 55 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4000 pF @ 20 V
PowerDissipation(Max) 2.5W (Ta), 96W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TDSON-8 FL

Vue d'ensemble

Description

BSC014N04LSIATMA1 likely refers to a specific course code or module within a broader academic program. While the code suggests a focus on a scientific or technical subject, the exact content is not universally recognizable without context. Typically, such courses would cover foundational principles in a particular field, possibly integrating theory with practical applications.
If you are inquiring about a specific academic institution's curriculum, it's advisable to consult the institution's course catalog or syllabus for detailed information regarding objectives, topics covered, and assessment methods. This would provide a clearer understanding of what to expect from the course. If you have a specific context or institution in mind, please provide that for a more tailored response.

Features

The BSC014N04LSIATMA1 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It supports a drain-source voltage (V_DS) of up to 40V.
2. Current Rating: It can handle a continuous drain current (I_D) of 14A, making it suitable for various power applications.
3. R_DS(on): The on-resistance is low, typically around 4.3 mΩ, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing the device to operate efficiently at lower gate voltages.
5. Package Type: It comes in a DPAK package, ensuring good thermal performance and ease of mounting.
6. Fast Switching: The MOSFET features low capacitance, promoting fast switching speeds for improved performance in switch-mode power supplies.
7. Applications: Ideal for use in DC-DC converters, power management systems, and motor drivers.
These features make the BSC014N04LSIATMA1 suitable for high-performance power applications.

Package

The BSC014N04LSIATMA1 is packaged in a DPAK (TO-252) form factor. This surface-mount package is designed for efficient thermal performance and ease of integration in various electronic circuits.

Pinout

The BSC014N04LSIATMA1 is a N-channel MOSFET produced by Infineon Technologies. It features a total of 6 pins. The primary functions of these pins are:
1. Gate (G): The input for the control signal that turns the MOSFET on or off.
2. Drain (D): The terminal through which the load current flows when the MOSFET is in the on state.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
Additionally, the MOSFET has a built-in body diode that allows current to flow in the reverse direction when necessary. The device is designed for high efficiency and low on-resistance, making it suitable for applications such as power management and switching regulation. The packaging type is typically a DPAK (TO-252), which aids in thermal performance and ease of mounting on PCBs.

Manufacturer

The BSC014N04LSIATMA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on power management, automotive, and security technologies, providing products that enhance energy efficiency and performance in electronic devices. Infineon is known for its innovations in power semiconductors, microcontrollers, and sensors, making it a key player in the semiconductor industry.

Application

The BSC014N04LSIATMA1 is a N-channel MOSFET primarily used in power management applications. Its main application areas include DC-DC converters, power supplies, motor drivers, and other high-efficiency switching applications. It is designed for low on-resistance and high-speed switching, making it suitable for use in consumer electronics, automotive systems, and industrial applications.

Equivalent

The BSC014N04LSIATMA1 is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FDB7030. Always verify specifications such as voltage, current ratings, and package types before substituting.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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