BCW66GLT1G

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BCW66GLT1G

TRANS NPN 45V 0.8A SOT23-3

  • Fabricant
  • Mfr. Partie #BCW66GLT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock2417

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 800 mA
Voltage-CollectorEmitterBreakdown(Max) 45 V
VceSaturation(Max)@IbIc 700mV @ 50mA, 500mA
Current-CollectorCutoff(Max) 20nA
DCCurrentGain(hFE)(Min)@IcVce 160 @ 100mA, 1V
Power-Max 300 mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

BCW66GLT1G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance, which enhances efficiency in power conversion and reduces heat generation. The device typically operates at a maximum voltage of 60V and a continuous drain current of around 66A, making it suitable for high-current applications.
Its compact package ensures easy integration into electronic circuits, while its fast switching capabilities enable efficient operation in high-speed applications. The BCW66GLT1G is often used in power supplies, motor drives, and other electronic devices requiring reliable and efficient power management. Additionally, its robust thermal characteristics allow for stable performance under varying load conditions, making it a popular choice among engineers and designers.

Features

The BCW66GLT1G is a high-performance N-channel MOSFET designed for a variety of applications, including power management and switching. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 66A, providing efficient power handling capabilities.
3. Low R_DS(on): The MOSFET has a low on-resistance, which reduces power losses and heat generation during operation.
4. Fast Switching: It is designed for high-speed switching, making it ideal for applications like DC-DC converters and motor drive circuits.
5. Thermal Performance: The device typically features a robust package that aids in heat dissipation, contributing to reliable operation.
6. Gate Threshold Voltage: It has a suitable gate threshold, allowing for easy interfacing with various control logic levels.
These features make the BCW66GLT1G a versatile choice for engineers in power electronics design.

Package

The BCW66GLT1G is packaged in a SC-70 (SOT-363) form factor. This small surface-mount package is commonly used for various electronic components due to its compact size and efficiency in circuit design.

Pinout

The BCW66GLT1G is a bipolar junction transistor (BJT) typically used for switching and amplification applications. It is housed in a SOT-23 package, which has a pin count of 3.
The functions of the pins are as follows:
1. Pin 1 (Base): This pin is used to control the transistor. A small current applied to the base allows a larger current to flow from collector to emitter.

2. Pin 2 (Collector): This pin connects to the load and is where the main current flows through when the transistor is in the 'on' state.

3. Pin 3 (Emitter): This pin is connected to the ground or negative side of the circuit. It completes the current path when the transistor is activated.
The BCW66GLT1G is commonly used in low-power applications due to its compact size and efficiency.

Manufacturer

The BCW66GLT1G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in the design and manufacture of a wide range of semiconductor components, including discrete and integrated devices for various applications such as automotive, industrial, communications, and consumer electronics. The company focuses on providing energy-efficient solutions and is recognized for its innovations in power management, signal management, and sensing technologies.

Application

The BCW66GLT1G is a dual NPN transistor used in various applications, including low-power amplifiers, signal switching, and digital logic circuits. It is suitable for consumer electronics, automotive applications, and portable devices. Its compact size and low power consumption make it ideal for space-constrained designs in communication systems and sensor interfacing.

Equivalent

The BCW66GLT1G is a general-purpose NPN transistor. Equivalent products include the 2N3904, BC547, and PN2222. These transistors have similar electrical characteristics and can often be substituted in many applications, but it's essential to verify specific parameters such as voltage, current ratings, and gain to ensure compatibility in your circuit.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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