BC857BWT1G

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BC857BWT1G

TRANS PNP 45V 0.1A SC70-3

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Spécifications

Part Status Active
Base Product Number BC857
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 150 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Packaging Bulk, Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The BC857BWT1G is a PNP bipolar junction transistor (BJT) widely used for various switching and amplification applications. It is part of the BC family of transistors, known for their reliability and efficiency. The device operates with a maximum collector current of 100 mA and a maximum voltage rating (V_CE) of 45 V, making it suitable for low to medium power applications.
Key features include low saturation voltage, high gain, and fast switching capabilities, which make it ideal for audio amplifiers, signal processing, and general-purpose switching tasks in electronic circuits. The transistor is available in a SOT-23 package, which offers a compact size for space-constrained applications.
Additionally, the BC857BWT1G is characterized by a low noise operation and good thermal stability, contributing to its popularity in consumer electronics, automotive, and industrial applications. When using this transistor, proper biasing and thermal management are essential to ensure optimal performance and reliability.

Features

The BC857BWT1G is a PNP bipolar junction transistor (BJT) designed for various switching and amplification applications. Key features include:
1. Configuration: PNP type, suitable for low-side switching.
2. Voltage Ratings: Maximum collector-emitter voltage (Vce) of 45V, and collector-base voltage (Vcb) of 45V.
3. Current Ratings: Maximum collector current (Ic) of 100mA.
4. Power Dissipation: Able to handle up to 500mW.
5. Gain: High DC current gain (hFE) ranging from 100 to 800, enhancing amplification capabilities.
6. Package: Available in SOT-23 package, offering a compact footprint for space-constrained applications.
7. Temperature Range: Operates effectively across a wide temperature range from -55°C to +150°C.
8. Switching Speed: Suitable for high-speed switching applications.
These attributes make the BC857BWT1G ideal for use in audio amplifiers, signal processing, and other low-power electronic circuits.

Package

The BC857BWT1G is packaged in a SOT-23 (Surface Mount) package type. This compact package is commonly used for surface mount applications in electronic circuits.

Pinout

The BC857BWT1G is a PNP transistor with a total of three pins. The pin configuration is as follows:
1. Emitter (E) - This pin is used to connect to the load and is where the current flows out of the transistor.
2. Base (B) - The base pin receives the input signal that controls the transistor's operation. A small current at this pin allows a larger current to flow from the collector to the emitter.
3. Collector (C) - This pin is where the current flows into the transistor from the power source or load.
The BC857BWT1G is commonly used in low-voltage switching and amplification applications, suitable for various electronic circuits. It is packaged in a SOT-23 form factor, making it compact for integration in space-constrained designs.

Manufacturer

The BC857BWT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in providing a wide range of electronic components, including analog, discrete, and logic devices. The company focuses on energy-efficient solutions and serves various markets, including automotive, industrial, communications, and consumer electronics. Headquartered in Phoenix, Arizona, ON Semiconductor operates in multiple locations worldwide and is known for its commitment to innovation and sustainability in semiconductor technology.

Application

The BC857BWT1G is a PNP bipolar junction transistor commonly used in low-power switching and amplification applications. It is suitable for use in signal processing, audio amplification, and low-voltage circuits. Typical applications include driver stages, signal modulation, and general-purpose amplification in consumer electronics, automotive systems, and industrial equipment. Its compact SOT-23 package allows for efficient utilization in space-constrained designs.

Equivalent

The BC857BWT1G is a PNP bipolar junction transistor (BJT). Equivalent products include the BC557, BC558, and MPS2222. However, specific parameters like voltage and current ratings should be verified to ensure compatibility. Always refer to datasheets for precise specifications.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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