AS4C8M16SB-6TIN

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AS4C8M16SB-6TIN

IC DRAM 128MBIT LVTTL 54TSOP II

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  • Mfr. Partie #AS4C8M16SB-6TIN
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Spécifications

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 128Mbit
Memory Organization 8M x 16
Memory Interface LVTTL
Write Cycle Time - Word, Page 12ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP II
Base Product Number AS4C8M16
Clock Frequency 166 MHz
Access Time 5 ns

Vue d'ensemble

Description

The AS4C8M16SB-6TIN is a 128 megabit (16MB) synchronous dynamic random-access memory (SDRAM) chip, designed for high-performance applications. Operating at a clock speed of up to 166 MHz, it supports a double data rate (DDR) interface, allowing for data transfers on both the rising and falling edges of the clock cycle. This memory chip is organized as 8 banks of 16 megabits each, utilizing a 3.2V power supply.
The AS4C8M16SB-6TIN is often used in consumer electronics, networking equipment, and various computing devices due to its balance of speed and efficiency. Its compact design and low power consumption make it suitable for mobile and embedded systems. Key features include burst mode capability for efficient data access and support for various timings, enhancing its adaptability in different applications. Overall, this SDRAM chip is a reliable choice for developers seeking to incorporate high-speed memory into their products.

Features

The AS4C8M16SB-6TIN is a 128Mb (16MB) DRAM memory chip manufactured by Alliance Semiconductor. It features a synchronous dynamic random-access memory (SDRAM) architecture with a DDR (Double Data Rate) interface, operating at a clock speed of 133 MHz. The chip has a data width of 16 bits and utilizes a 3.2V power supply.
Key features include:
- Organization: 8M x 16 bits
- Access time: Typically 6 ns
- Interface: SDRAM with DDR capability
- Package: Offered in a 54-pin TSOP-II form factor
- Temperature range: Commercial and industrial options
- High-performance operation with low power consumption
This chip is suitable for applications in consumer electronics, telecommunications, networking equipment, and various embedded systems, providing efficient memory solutions for data-intensive tasks.

Package

The AS4C8M16SB-6TIN is offered in a 54-ball FBGA (Fine Ball Grid Array) package type, which provides a compact and efficient layout for high-density memory applications.

Pinout

The AS4C8M16SB-6TIN is a 512Mb (64MB) DDR3 SDRAM memory chip with a pin count of 78. It comes in a 78-ball TFBGA (Thin Fine Ball Grid Array) package. The primary function of this memory device is to serve as a volatile storage solution for various applications, including computers, servers, and embedded systems, where it provides high-speed data access and efficient memory performance.
The chip operates with a data rate of 1600 MT/s and supports a wide range of operating voltages, typically around 1.5V. Key features include low power consumption, high bandwidth, and the ability to handle multiple data transactions concurrently. This makes it suitable for applications requiring fast data processing and storage capabilities.

Manufacturer

The AS4C8M16SB-6TIN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in the design, production, and marketing of memory solutions, including DRAM and SRAM products. Founded in 2006 and based in the United States, the company focuses on providing high-quality memory components for a variety of applications, such as consumer electronics, automotive, industrial, and telecommunications. They are known for offering a wide range of memory products that are compatible with existing designs, helping customers extend product life cycles and reduce development costs.

Application

The AS4C8M16SB-6TIN is a 128Mb DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip primarily used in applications such as consumer electronics, telecommunications, and computing devices. It serves in mobile phones, tablets, laptops, and embedded systems, providing high-speed data access and efficient memory storage for multimedia processing, gaming, and multitasking operations.

Equivalent

The AS4C8M16SB-6TIN is a 128Mb (16MB) DDR3 SDRAM memory chip. Equivalent products include the MT41J128M16HA-15E and the Hynix H5TQ2G83AFR. Always verify compatibility with your specific application, as specifications may vary slightly between manufacturers.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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