AS4C64M16D3B-12BCN

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AS4C64M16D3B-12BCN

IC DRAM 1GBIT PARALLEL 96FBGA

  • Fabricant
  • Mfr. Partie #AS4C64M16D3B-12BCN
  • Paquet FBGA-96
  • Fiche de données
  • En stock6622

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Spécifications

Package Tray
ProductStatus Active
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR3
MemorySize 1Gb (64M x 16)
MemoryInterface Parallel
ClockFrequency 800 MHz
WriteCycleTime-WordPage 15ns
AccessTime 20 ns
Voltage-Supply 1.425V ~ 1.575V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 96-TFBGA

Vue d'ensemble

Description

The AS4C64M16D3B-12BCN is a 1 Gigabit (Gb) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip manufactured by Alliance Semiconductor. It features a 64 Meg x 16 configuration, allowing for efficient data handling and storage. Designed for high-performance applications, it operates at a 1.5V supply voltage and supports data rates of up to 1600 MT/s (Megatransfers per second).
This memory chip is commonly used in various electronic devices, including computers, graphics cards, and other consumer electronics, due to its low power consumption and high-speed performance. The "12B" in its designation indicates a 12-nanometer fabrication process, enhancing its efficiency, while "CN" signifies the specific packaging and temperature range.
Overall, the AS4C64M16D3B-12BCN is suitable for applications requiring reliable and fast memory solutions, making it a viable choice for modern computing demands.

Features

The AS4C64M16D3B-12BCN is a DDR3 SDRAM memory chip with the following key features:
1. Organization: It is organized as 64M x 16 bits, providing a total capacity of 1GB.
2. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
3. Voltage: Designed to operate at a supply voltage of 1.5V, with a permissible range of 1.425V to 1.575V.
4. Package: Available in a compact 78-ball FBGA (Fine Ball Grid Array) package.
5. Latency: Supports CAS latency (CL) options, typically CL11 or CL13.
6. Features: Includes features like burst mode, deep power-down mode, and self-refresh.
7. Compatibility: It is compatible with DDR3 architecture, making it suitable for various applications, including consumer electronics, computing, and networking.
The AS4C64M16D3B-12BCN is designed for high-performance applications requiring reliable and efficient memory solutions.

Package

The AS4C64M16D3B-12BCN is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for compactness and efficient thermal performance, suitable for memory applications.

Pinout

The AS4C64M16D3B-12BCN is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip with a pin count of 78. This memory device has a density of 1 Gb (Gigabit) and is organized as 64M x 16 bits.
Key functions of the pin assignments include:
- Data Pins (DQ0-DQ15): These are the data input/output pins for read/write operations.
- Address Pins (A0-A12): Used to select the memory addresses for the operations.
- Control Pins (CS, RAS, CAS, WE): Control signals for memory operations, enabling chip select, row address strobe, column address strobe, and write enable.
- Clock Pins (CK, CK#): These pins provide the clock signal to synchronize the operations of the memory.
- Power and Ground Pins (VDD, VSS): Power supply and ground connections.
Overall, the AS4C64M16D3B-12BCN is designed for high-performance memory applications in computing systems.

Manufacturer

The manufacturer of the AS4C64M16D3B-12BCN is Alliance Memory Inc. Alliance Memory is a semiconductor company that specializes in providing memory solutions, including DRAM, SRAM, and Flash memory products. The company focuses on sourcing and supplying high-quality memory components for a variety of applications, such as consumer electronics, industrial equipment, telecommunications, and automotive systems. Their products are designed to be compatible with existing systems and often serve as drop-in replacements for legacy memory components from other manufacturers.

Application

The AS4C64M16D3B-12BCN is a DRAM memory chip used in various applications, including consumer electronics, smartphones, tablets, laptops, and gaming consoles. It is suitable for use in high-performance computing, networking devices, and automotive electronics, providing efficient data storage and retrieval for applications requiring fast memory access and reliability.

Equivalent

The AS4C64M16D3B-12BCN is a 64M x 16-bit DDR3 SDRAM memory chip. Equivalent products include:
1. MT41J128M16HA-125:E
2. H5TQ1G83AFR
3. K4B4G1646D-BCK0
Always verify compatibility with your specific application requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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