AS4C512M16D3L-12BIN

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AS4C512M16D3L-12BIN

IC DRAM 8GBIT PARALLEL 96FBGA

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Spécifications

Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR3L
MemorySize 8Gb (512M x 16)
MemoryInterface Parallel
ClockFrequency 800 MHz
WriteCycleTime-WordPage 15ns
AccessTime 13.75 ns
Voltage-Supply 1.283V ~ 1.45V
OperatingTemperature -40°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 96-TFBGA

Vue d'ensemble

Description

The AS4C512M16D3L-12BIN is a DRAM memory chip designed for high-performance applications. It is a 512 Megabit (64 Megabyte) DDR3 SDRAM, organized as 16 bits x 32, making it suitable for various computing tasks. Operating at a data rate of 1600 MT/s, it supports high bandwidth for efficient data processing.
This chip features a 12ns access time and operates on a 1.5V supply voltage, making it energy-efficient while maintaining performance. It is typically used in consumer electronics, embedded systems, and computing devices requiring reliable memory solutions.
The AS4C512M16D3L-12BIN is compliant with industry standards, ensuring compatibility with various motherboards and systems. Its compact design allows for easy integration into a wide range of applications, enhancing both speed and efficiency.
In summary, this chip is an ideal choice for developers seeking a robust and efficient memory solution in modern digital systems.

Features

The AS4C512M16D3L-12BIN is a DRAM chip designed for high-performance applications. Here are its key features:
1. Type: DDR3 SDRAM
2. Density: 512 Megabits (or 64 Megabytes)
3. Organization: 16-bit wide data bus with a x16 organization.
4. Speed: Operates at a maximum clock frequency of 1600 MT/s (mega-transfers per second).
5. Voltage: Typically operates at a supply voltage of 1.5V.
6. Package: Available in a standard 78-ball TFBGA package.
7. Temperature Range: Supports a range of operating temperatures, making it suitable for various applications.
8. Applications: Ideal for use in consumer electronics, networking devices, and industrial applications.
This chip is designed to deliver reliable performance in memory-intensive tasks, making it a popular choice in modern electronic devices.

Package

The AS4C512M16D3L-12BIN is a DDR3 SDRAM memory chip packaged in a standard 78-ball FBGA (Fine Ball Grid Array) format. This package type provides a compact solution for high-density memory applications.

Pinout

The AS4C512M16D3L-12BIN is a 4 Gb (gigabit) DDR3 SDRAM memory chip with a pin count of 78. It operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s (megatransfers per second). The chip is organized as a 512M x 16 configuration, allowing for high-density memory solutions.
Key functions include providing high-speed data access and storage for various applications, including computers, servers, and networking equipment. It features a double data rate interface, allowing data to be transferred on both the rising and falling edges of the clock signal, thus improving overall bandwidth. The chip also includes various power-saving features, making it suitable for energy-efficient designs.
Please consult the datasheet for detailed electrical characteristics and pin assignments.

Manufacturer

The AS4C512M16D3L-12BIN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in the design, development, and supply of memory solutions. They focus on providing a range of DRAM and SRAM products, particularly in the specialty memory market, catering to various applications such as consumer electronics, telecommunications, and industrial equipment. Their products are often used in areas where legacy support and cost-effective memory solutions are needed. Alliance Memory aims to deliver high-quality memory products while maintaining compatibility with existing technologies.

Application

The AS4C512M16D3L-12BIN is a DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics, networking devices, servers, and industrial automation. It is suitable for high-performance computing tasks, data buffering, and caching in systems requiring reliable memory solutions. Its features support mobile devices, smart TVs, and gaming consoles, providing efficient data processing and storage capabilities.

Equivalent

The AS4C512M16D3L-12BIN is a DDR3 SDRAM memory chip with a density of 512 Mb (64 MB) and a configuration of 16 bits x 32. Equivalent products include the MT41K512M16HA-125, Hynix H5TQ1G83AFR, and the Samsung K3RLF512M16D1. Always verify compatibility based on specifications such as voltage, speed, and pin configuration.

Expédition

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offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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