AS4C256M16D4-75BCN

Les images sont à titre de référence seulement

AS4C256M16D4-75BCN

IC DRAM 4GBIT PARALLEL 96FBGA

  • Fabricant
  • Mfr. Partie #AS4C256M16D4-75BCN
  • Paquet
  • Fiche de données
  • En stock768

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Part Status Not For New Designs
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13.5)
Base Product Number AS4C256
Clock Frequency 1.333 GHz
Access Time 18 ns

Vue d'ensemble

Description

The AS4C256M16D4-75BCN is a 256 Megabit (32 Megabytes) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip designed for high-performance applications. It features a 16-bit data bus, allowing for 2 x 16-bit data outputs, and operates at a clock frequency of up to 800 MHz, supporting data rates of 1600 MT/s.
This memory chip is organized as 16 Meg x 16 bits, and it uses a 78-ball BGA (Ball Grid Array) package for compact integration in electronic designs. The "75" in the part number indicates a maximum clock frequency of 1333 MHz (DDR speed) and a cycle time of 1.5 ns, while "BCN" refers to specific features or process technologies used in the chip.
The AS4C256M16D4-75BCN is ideal for applications requiring fast memory access, such as networking, computing, and consumer electronics, due to its low power consumption and efficient performance. It is compliant with JEDEC specifications, ensuring compatibility with a wide range of devices.

Features

The AS4C256M16D4-75BCN is a DRAM memory chip featuring the following key specifications:
1. Type: DDR3 SDRAM
2. Capacity: 256 Megabits (32 Megabytes)
3. Organization: 16 bits x 16 bits
4. Speed: Operates at a clock frequency of up to 800 MHz, with a data rate of 1600 MT/s.
5. Package: Available in a 78-ball BGA (Ball Grid Array) package.
6. Voltage: Operates at a standard voltage of 1.5V.
7. Latency: Supports a CAS latency of 9 (CL9).
8. Features: Offers features like burst length of 8, and supports both sequential and interleave access modes.
9. Thermal Characteristics: Designed to provide reliable thermal performance under operation.
10. Applications: Suitable for use in consumer electronics, networking equipment, and other embedded systems.
This chip is ideal for applications requiring moderate capacity and speed in a compact form factor.

Package

The AS4C256M16D4-75BCN is a DDR3 SDRAM memory chip packaged in a 78-ball BGA (Ball Grid Array) format. This compact package design facilitates efficient thermal performance and high-density integration suitable for various electronic applications.

Pinout

The AS4C256M16D4-75BCN is a DDR3 SDRAM memory chip with a pin count of 78. It is designed for various memory applications and features a memory capacity of 256 Megabits (32 Megabytes) organized as 16 Meg x 16 bits. The chip operates at a data rate of 800 MT/s, with a supply voltage of 1.5V.
The primary functions of the AS4C256M16D4-75BCN include data storage and retrieval, supporting various operations such as read, write, and refresh cycles. It is commonly used in applications requiring high-speed memory access, such as computers, embedded systems, and other electronic devices. The pin configuration includes data, address, control signals, and power connections, facilitating communication with the memory controller and integration into circuit designs.

Manufacturer

The AS4C256M16D4-75BCN is manufactured by Alliance Semiconductor Corporation. Alliance Semiconductor is a technology company that specializes in designing and supplying advanced memory solutions, including DRAM and other semiconductor products. They focus on high-performance, low-power memory solutions for various applications, including consumer electronics, telecommunications, and industrial markets. The company is known for its innovative approach to memory technologies and aims to provide reliable and efficient products to meet the growing demands of the semiconductor industry.

Application

The AS4C256M16D4-75BCN is a 256 Mb DDR3 SDRAM chip commonly used in various applications, including consumer electronics, telecommunications, networking equipment, automotive systems, and industrial automation. Its features support high-performance computing tasks, data buffering, and memory expansion in devices such as smartphones, tablets, laptops, servers, and embedded systems.

Equivalent

The AS4C256M16D4-75BCN is a 256Mb DDR3 SDRAM chip. Equivalent products include:
1. MT41J256M16HA-15E (Micron)
2. H5TQ2G83CFR (SK Hynix)
3. K4B4G1646E-BCK0 (Samsung)
Ensure compatibility with your specific application requirements, as variations in speed, package, and voltage may exist.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire