AS4C256M16D3LC-12BCN

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AS4C256M16D3LC-12BCN

IC DRAM 4GBIT PARALLEL 96FBGA

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  • Mfr. Partie #AS4C256M16D3LC-12BCN
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Spécifications

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Write Cycle Time - Word, Page 15ns
Access Time 20 ns
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13.5)
Base Product Number AS4C256

Vue d'ensemble

Description

The AS4C256M16D3LC-12BCN is a DRAM (Dynamic Random Access Memory) chip manufactured by Alliance Memory. It is a 256 Megabit (32 Megabyte) DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) organized as 16 bits x 16 bits. This memory chip operates at a clock speed of 800 MHz, supporting data rates up to 1600 MT/s, and is designed for applications requiring high-performance memory solutions.
Key features include a low voltage operation of 1.5V, which helps to reduce power consumption while maintaining high-speed performance. The device is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) form factor, making it suitable for compact electronic designs. The AS4C256M16D3LC-12BCN is ideal for use in various applications, including consumer electronics, computing devices, and networking equipment, where reliable and efficient memory performance is essential.

Features

The AS4C256M16D3LC-12BCN is a DDR3 SDRAM memory chip designed for high-performance applications. Key features include:
- Density: 256 Megabits (32 Megabytes) per chip, organized as 16 bits x 16 banks.
- Speed: Operates at a clock frequency of 800 MT/s, supporting a data rate of 1600 Mbps.
- Voltage: Operates at a low voltage of 1.5V ± 0.1V.
- Package: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
- Functions: Supports burst lengths of 4 and 8, allowing for efficient data transfer.
- Latency: Offers low CAS latency options, enhancing performance in specific applications.
- Thermal: Features built-in thermal management to ensure reliable operation under varying temperatures.
This chip is suitable for applications in consumer electronics, networking devices, and computing systems, providing a balance of performance and power efficiency.

Package

The AS4C256M16D3LC-12BCN is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format.

Pinout

The AS4C256M16D3LC-12BCN is a DDR3 SDRAM memory chip with a pin count of 78. It is organized as 256 Meg x 16 bits and operates on a 1.5V power supply.
The key functions of its pins include:
- Data I/O: It features 16 data pins (DQ0-DQ15) for data transfer.
- Command/Address: Pins for command (CMD) and address (A) input, enabling control of the memory.
- Clock: It includes clock pins (CLK and CLK#) for synchronization.
- Control: Pins like CS# (Chip Select), RAS#, CAS#, and WE# (Write Enable) are used for memory operations.
- Power: VDD and VSS pins provide power and ground connections.
The device supports various features such as burst mode, and it is suitable for applications requiring high-speed memory access, such as in computers and other electronic devices.

Manufacturer

The AS4C256M16D3LC-12BCN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in providing memory solutions, particularly in the areas of DRAM (Dynamic Random-Access Memory) and SRAM (Static Random-Access Memory). They focus on offering high-quality memory products for various applications, including consumer electronics, telecommunications, and industrial use. The company aims to provide cost-effective alternatives to original equipment manufacturer (OEM) memory products, ensuring compatibility and reliability in their offerings.

Application

The AS4C256M16D3LC-12BCN is a 4GB DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics, computer systems, networking devices, and industrial equipment. Its high-speed performance and reliability make it suitable for laptops, desktops, servers, and embedded systems that require efficient data processing and storage.

Equivalent

The AS4C256M16D3LC-12BCN chip is a 256Mb DRAM (DDR3) memory component. Equivalent products include:
1. MT41J256M16HA-125
2. Hynix H5TQ2G83AFR
3. K4B4G1646D-BCK0
Ensure to verify specifications like speed, voltage, and pin configuration for compatibility in specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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