AS4C256M16D3LB-12BIN

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AS4C256M16D3LB-12BIN

IC DRAM 4GBIT PARALLEL 96FBGA

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Spécifications

Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR3L
MemorySize 4Gb (256M x 16)
MemoryInterface Parallel
ClockFrequency 800 MHz
WriteCycleTime-WordPage 15ns
AccessTime 20 ns
Voltage-Supply 1.283V ~ 1.45V
OperatingTemperature -40°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 96-TFBGA

Vue d'ensemble

Description

The AS4C256M16D3LB-12BIN is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip manufactured by Alliance Semiconductor. It features a capacity of 256 Megabits (32 Megabytes) and is organized as 16 bits wide, making it suitable for applications requiring moderate memory storage. This memory operates at a data rate of up to 1600 MT/s (megatransfers per second) with a clock frequency of 800 MHz, adhering to the DDR3 standard.
The chip has a low voltage operation of 1.5 V, which enhances power efficiency, making it ideal for portable devices and energy-sensitive applications. It also supports various features such as burst mode and a built-in self-test function. With a 60-ball BGA (Ball Grid Array) package, it allows for a compact design in various electronic devices, including smartphones, tablets, and embedded systems. Overall, the AS4C256M16D3LB-12BIN is a reliable choice for manufacturers looking to incorporate high-speed, efficient memory into their products.

Features

The AS4C256M16D3LB-12BIN is a 4 Gb DDR3 SDRAM memory chip designed for high-performance computing applications. Key features include:
1. Density: 4 Gigabits (512 Megabytes x 8-bits).
2. Organization: 256M x 16 configuration, suitable for various memory applications.
3. Speed: Operates at a data rate of up to 1600 MT/s (megatransfers per second) with a clock frequency of 800 MHz.
4. Voltage: Low voltage operation of 1.5V, enhancing energy efficiency.
5. Package: Delivered in a 78-ball TFBGA (Thin Fine Ball Grid Array) package, which aids in compact designs.
6. Temperature Range: Industrial-grade temperature range, suitable for harsh environments.
7. Data Integrity: Features like refresh functions and error-checking capabilities to ensure data reliability.
This chip is commonly used in applications such as networking, telecommunications, automotive, and industrial systems, where performance and reliability are critical.

Package

The AS4C256M16D3LB-12BIN is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) configuration. This package type provides a compact footprint, suitable for high-density applications in computing and mobile devices.

Pinout

The AS4C256M16D3LB-12BIN is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip with a pin count of 78.
### Pin Functions:
1. Data Pins: 16 data I/O pins (DQ0-DQ15) for data transfer.
2. Address Pins: 13 address pins (A0-A12) for addressing memory locations.
3. Control Pins: Includes pins for command inputs (CS, RAS, CAS, WE) and clock (CLK, CLK#).
4. Power Pins: VDD and VSS for power supply and ground connections.
5. Other Pins:
- CKE (Clock Enable) for enabling/disabling the clock.
- OD (Output Disable) to control output drivers.
- DM (Data Mask) for masking data inputs during write operations.
This component is typically used in applications requiring high-performance memory, such as computers and embedded systems.

Manufacturer

The AS4C256M16D3LB-12BIN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in providing memory solutions, particularly in the areas of DRAM (Dynamic Random-Access Memory) and NAND Flash memory. They focus on delivering high-quality, cost-effective memory products that are compatible with various applications, including consumer electronics, industrial systems, and telecommunications. The company emphasizes reliability and performance in its offerings and often serves as a supplier for legacy memory products, catering to markets that require specific memory types that may no longer be widely available from other manufacturers.

Application

The AS4C256M16D3LB-12BIN is a 4GB DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, servers, laptops, desktops, and embedded systems. Its features support high-speed data processing in gaming consoles, networking equipment, and industrial automation devices. The chip is ideal for tasks requiring efficient data storage and retrieval, enhancing overall system performance.

Equivalent

The AS4C256M16D3LB-12BIN chip is a 256Mb DDR3 SDRAM memory device. Equivalent products include:
1. MT41J256M16HA-125
2. H5TQ1G83BFR
3. K4B4G1646D-BCK0
4. IS43TR16640A-125B
Ensure compatibility in terms of specifications, voltage, and timing when selecting alternatives.

Expédition

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offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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