APT60DQ120BG

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APT60DQ120BG

DIODE GEN PURP 1.2KV 60A TO247

  • Fabricant
  • Mfr. Partie #APT60DQ120BG
  • Paquet TO-247-2
  • Fiche de données
  • En stock5094

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Spécifications

Package Tube
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 1200 V
Current-AverageRectified(Io) 60A
Voltage-Forward(Vf)(Max)@If 3.3 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 320 ns
Current-ReverseLeakage@Vr 100 µA @ 1200 V
MountingType Through Hole
Package/Case TO-247-2
SupplierDevicePackage TO-247 [B]

Vue d'ensemble

Description

APT60DQ120BG is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a voltage rating of 1200V and a continuous current rating of 60A, making it suitable for use in high-voltage and high-current applications such as power inverters, motor drives, and industrial power supplies.
Key specifications include low on-resistance (RDS(on)), which enhances efficiency by minimizing conduction losses, and fast switching speeds that allow for efficient operation in switching applications. The device is housed in a TO-220 package, facilitating easy heat dissipation through a heat sink.
APT60DQ120BG's design emphasizes reliability and thermal performance, which is critical in demanding applications. It typically integrates well into circuits requiring robust performance under varying load conditions. Overall, it is favored by engineers for its combination of high voltage, high current capacity, and efficiency in power electronic systems.

Features

The APT60DQ120BG is an N-channel MOSFET designed for power electronics applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle up to 60A of continuous current, allowing for robust performance in demanding environments.
3. On-Resistance (R_DS(on)): The device offers a low on-resistance, typically around 0.025 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): With a threshold voltage between 2V and 4V, it ensures efficient switching capabilities.
5. Packaging: The MOSFET is available in a TO-220 package, facilitating easy thermal management and integration into circuits.
6. Applications: It is commonly used in power supplies, motor drives, and other high-efficiency switching applications.
Overall, the APT60DQ120BG is optimized for high performance, efficiency, and reliability in various power applications.

Package

The APT60DQ120BG is packaged in a DPAK (TO-252) package type. This package is commonly used for power MOSFETs and features a compact design suitable for surface mounting applications.

Pinout

The APT60DQ120BG is a power MOSFET with a total pin count of 5. Its primary function is to act as a high-speed switch for power electronics applications, capable of handling high voltages (1200V) and currents (60A).
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output pin where the load is connected.
3. Source (S) - The return path for the current; connects to ground in common-source configurations.
4. Body Diode (integrated) - Allows current to flow from the source to the drain when the MOSFET is off, providing protection against reverse polarity.
5. Case/Heatsink - For thermal management and enhanced performance.
The APT60DQ120BG is typically used in applications such as power supplies, inverters, and motor drives, where efficient high-voltage switching is essential.

Manufacturer

The APT60DQ120BG is manufactured by APT (Advanced Power Technology), which is a part of the semiconductor industry. APT specializes in power semiconductor devices, particularly focusing on MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors). The company produces high-performance components used in various applications, including industrial, automotive, and consumer electronics. APT is known for its emphasis on innovation and reliability in power management solutions.

Application

The APT60DQ120BG is a 1200V, 60A N-channel IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. Its application areas include motor drives, induction heating, renewable energy systems (like solar inverters), power supplies, and industrial equipment. It excels in high-efficiency switching, making it suitable for high-voltage and high-current applications.

Equivalent

The APT60DQ120BG is a 600V, 60A IGBT. Equivalent products include:
1. Infineon IGBT modules like the IKW60N60T or IGBT series.
2. Mitsubishi M567-90 or MJB60N60D.
3. ON Semiconductor MBS60N60.
Always check datasheets for specific characteristics to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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