APT60D120BG

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APT60D120BG

DIODE STD 1200V 60A TO247 [B]

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Spécifications

Part Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 60A
Voltage - Forward (Vf) (Max) @ If 2.5 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 250 µA @ 1200 V
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247 [B]
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number APT60D120
Reverse Recovery Time (trr) 400 ns

Vue d'ensemble

Description

The APT60D120BG is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for use in various power applications, particularly in industrial and automotive sectors. It features a voltage rating of 1200V and a current rating of 60A, making it suitable for medium to high power applications such as motor drives, induction heating, and renewable energy systems.
The device is known for its low conduction and switching losses, enabling higher efficiency in power conversion. It comes in a sturdy package that provides excellent thermal management, ensuring reliable operation even under demanding conditions. The APT60D120BG is also characterized by its fast switching capabilities, which contribute to reduced EMI (electromagnetic interference) and improved system performance.
Overall, the APT60D120BG is a versatile choice for engineers looking to design efficient and reliable power electronic systems.

Features

The APT60D120BG is a high-performance N-channel MOSFET with a voltage rating of 120V and a continuous drain current of 60A. It is designed for high-efficiency applications, including power supplies, motor drivers, and industrial equipment. Key features include:
- Low Rds(on): This ensures reduced conduction losses, leading to better thermal performance and efficiency.
- Fast Switching: Optimized for quick switching applications, making it suitable for high-frequency operations.
- Thermal Performance: Designed with a low thermal resistance, allowing for effective heat dissipation.
- Robust Packaging: Available in a TO-220 package, which facilitates easy mounting and enhanced thermal management.
- Gate Threshold Voltage: Operates efficiently with a wide gate threshold voltage, ensuring compatibility with various drive voltages.
Overall, the APT60D120BG is ideal for applications requiring high power handling and efficiency, making it a reliable choice for engineers in the field.

Package

The APT60D120BG is packaged in a TO-247 format, which is a type of power semiconductor package designed for high-power applications. This package provides good thermal performance and is suitable for mounting on heatsinks.

Pinout

The APT60D120BG is a power MOSFET produced by APT (Advanced Power Technology). It features a total of 6 pins.
Pin Configuration:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
Functionality:
- The APT60D120BG is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 60A.
- It is utilized in various applications such as power supplies, motor drives, and inverters due to its efficiency and ability to handle high power levels.
This device integrates well in circuits requiring fast switching and high reliability.

Manufacturer

The APT60D120BG is manufactured by APT (Advanced Power Technology), a company that specializes in designing and producing power semiconductor products. APT is known for its expertise in power electronics, particularly in the manufacture of high-performance insulated gate bipolar transistors (IGBTs), which are widely used in various applications, including industrial drives, renewable energy systems, and electric vehicles. APT focuses on providing innovative solutions that enhance efficiency and performance in power conversion and control.

Application

The APT60D120BG is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Its key application areas include renewable energy systems (like solar inverters), motor drives, industrial automation, and power supplies. It is ideal for high-efficiency switching and can handle significant power levels, making it suitable for applications requiring high performance and reliability in power conversion and control.

Equivalent

The APT60D120BG is a 600V, 60A IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. Infineon IGBT: FZ120N60
2. ON Semiconductor IGBT: MBS60/12
3. Mitsubishi IGBT: CM600HA-24H
Always verify specifications and application requirements to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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