APT30DQ60BG

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APT30DQ60BG

DIODE GEN PURP 600V 30A TO247

  • Fabricant
  • Mfr. Partie #APT30DQ60BG
  • Paquet TO-247-2
  • Fiche de données
  • En stock6288

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Spécifications

Package Tube
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 600 V
Current-AverageRectified(Io) 30A
Voltage-Forward(Vf)(Max)@If 2.4 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 30 ns
Current-ReverseLeakage@Vr 25 µA @ 600 V
MountingType Through Hole
Package/Case TO-247-2
SupplierDevicePackage TO-247 [B]

Vue d'ensemble

Description

APT30DQ60BG is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by APT (Advanced Power Technology). It is designed for high-efficiency power switching applications, primarily in industrial and automotive sectors. The device features a voltage rating of 600V and a current rating of 30A, making it suitable for use in power supplies, motor controllers, and other high-voltage applications.
Key specifications typically include a low on-resistance, which helps reduce power loss during operation, and fast switching capabilities, which enhance performance in high-frequency applications. The APT30DQ60BG is often packaged in a TO-220 form factor, allowing for effective thermal management. Its design focuses on reliability and robustness, enabling operation in demanding environments. This MOSFET is particularly valued for its efficiency and versatility in handling high power levels while maintaining low energy consumption.

Features

The APT30DQ60BG is a high-performance power MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Capable of handling up to 600V, making it suitable for high-voltage applications.
2. Current Rating: Supports continuous drain current up to 30A, providing robust performance.
3. Low On-Resistance: Offers a low RDS(on), typically around 0.3 ohms, which minimizes power loss and heat generation.
4. Fast Switching: Designed for efficient switching, enhancing the overall performance in power conversion circuits.
5. Thermal Management: Features a TO-220 package that allows effective heat dissipation, essential for maintaining reliable operation.
6. Gate Drive Voltage: Compatible with standard gate drive voltages, allowing easy integration into existing circuits.
These features make the APT30DQ60BG an ideal choice for applications in power supplies, motor drives, and renewable energy systems.

Package

The APT30DQ60BG is typically packaged in a TO-220 form factor. This package type is designed for power semiconductor devices, providing efficient heat dissipation and robust mounting options for applications in power management and conversion.

Pinout

The APT30DQ60BG is an N-channel MOSFET typically used in power management applications. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET; applying a voltage turns the device on.
2. Drain (D) - The terminal through which the load current flows; connected to the output.
3. Source (S) - The terminal that connects to the ground or the negative side of the power supply.
The device is known for its high switching speed and efficiency, making it suitable for applications in power supplies, motor drives, and converters. It has a maximum drain-source voltage (Vds) of 600V and a maximum continuous drain current (Id) of 30A.

Manufacturer

The APT30DQ60BG is manufactured by Advanced Power Technology (APT), which is a company known for producing power semiconductor devices. APT specializes in high-performance products such as IGBTs (Insulated Gate Bipolar Transistors), MOSFETs, and other power modules used in various applications, including industrial, automotive, and renewable energy systems. The company focuses on delivering advanced technology solutions for efficient power management and conversion. Founded in the late 1980s, APT has established a reputation for innovation and quality within the semiconductor industry.

Application

The APT30DQ60BG is a high-performance IGBT (Insulated Gate Bipolar Transistor) used primarily in industrial applications such as motor drives, power inverters, and switching power supplies. Its fast switching capabilities make it suitable for renewable energy systems, like solar inverters, as well as in welding and induction heating applications. Additionally, it can be utilized in consumer electronics and automotive systems for efficient power management.

Equivalent

The APT30DQ60BG is a power MOSFET. Equivalent products include the IRF840, STP30NF06, and FQP30N06L. Always check specific datasheets for parameters like voltage, current ratings, and R_DS(on) to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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