AIKW50N65DF5

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AIKW50N65DF5

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  • Mfr. Partie #AIKW50N65DF5
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Spécifications

Packaging Tube
Brand Infineon Technologies
Product Type IGBT Transistors
Subcategory IGBTs
Maximum Gate Emitter Voltage - 20 V, 20 V

Vue d'ensemble

Description

The AIKW50N65DF5 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a voltage rating of 650V and a continuous current rating of 50A, making it suitable for power management in various electronic circuits, including power supplies and motor drives.
Key characteristics include low on-resistance, which improves efficiency and reduces heat generation during operation. The device is typically used in applications such as switch-mode power supplies (SMPS), inverters, and automotive electronics.
Its compact package design contributes to space-saving in circuit layouts, while its robustness ensures reliable performance in demanding environments. Proper thermal management is essential when implementing the AIKW50N65DF5 to maintain optimal operating conditions and prevent thermal runaway.
Overall, it serves as a reliable component in modern power electronics, contributing to improved energy efficiency and system performance.

Features

The AIKW50N65DF5 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: 50A continuous drain current, enabling robust performance in power circuits.
3. RDS(on): Low on-resistance typically around 0.5 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate voltage threshold, facilitating compatibility with various gate drive circuits.
5. Fast Switching: Optimized for high-speed switching applications, enhancing performance in power supplies and converters.
6. Package: Available in TO-220 or DPAK packages, providing effective heat dissipation.
7. Applications: Ideal for use in power inverters, motor drives, and other power management systems.
These features make the AIKW50N65DF5 suitable for demanding applications requiring high efficiency and reliability.

Package

The AIKW50N65DF5 is a N-channel MOSFET typically packaged in a TO-247 format, which is designed for high-power applications. This package provides efficient thermal management and is suitable for various industrial and automotive uses.

Pinout

The AIKW50N65DF5 is an N-channel MOSFET designed for high-voltage applications. It features a TO-220 package with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here allows the current to flow between the drain and source.
2. Drain (D): This is the terminal through which current enters the MOSFET when it is turned on.
3. Source (S): This pin allows current to exit the MOSFET.
The device is rated for a maximum voltage of 650V and a continuous drain current of up to 50A, making it suitable for various power conversion applications.

Manufacturer

The AIKW50N65DF5 is manufactured by Infineon Technologies, a leading semiconductor company based in Germany. Infineon specializes in providing semiconductor and system solutions that address key challenges in various industries, including automotive, industrial power control, and the Internet of Things (IoT). The company focuses on innovation in power semiconductors, microcontrollers, and sensors, aiming to enhance energy efficiency and connectivity in electronic systems. Infineon is recognized for its commitment to sustainability and advanced technology development in the semiconductor sector.

Application

The AIKW50N65DF5 is a high-performance N-channel MOSFET, primarily used in power electronics applications. Its application areas include power supply circuits, motor drives, inverters, and renewable energy systems such as solar inverters. It is also utilized in industrial automation, electric vehicles, and telecom equipment, where efficient switching and high voltage handling are necessary.

Equivalent

The AIKW50N65DF5 is a 650V N-channel MOSFET typically used in power applications. Equivalent products include the Infineon IPW50R065CFD, STMicroelectronics STP50NF65, and ON Semiconductor NTP50N65. Always verify specifications such as voltage rating, Rds(on), and package type before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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