2SK3557-6-TB-E

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2SK3557-6-TB-E

JFET N-CH 5V 3CP

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  • Mfr. Partie #2SK3557-6-TB-E
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Spécifications

Part Status Active
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 15 V
Drain to Source Voltage (Vdss) 15 V
Current - Drain (Idss) @ Vds (Vgs=0) 20 mA @ 5 V
Current Drain (Id) - Max 50 mA
Voltage - Cutoff (VGS off) @ Id 1.5 V @ 100 µA
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 5V
Power - Max 200 mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CP
Base Product Number 2SK3557

Vue d'ensemble

Description

The 2SK3557-6-TB-E is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power electronics applications. It is designed for efficient switching and amplification in various electronic circuits, including power supplies, motor control, and audio amplification systems.
Key features of the 2SK3557-6-TB-E include a high voltage rating, low on-resistance, and fast switching capabilities, making it suitable for high-frequency applications. The device is packaged in a compact format, facilitating easy integration into circuit designs.
Typical specifications may include a maximum drain-source voltage (VDS) of up to 60V, a continuous drain current (ID) rating, and a low threshold voltage (VGS(th)), contributing to its efficiency and reliability.
Overall, the 2SK3557-6-TB-E is an essential component for engineers looking to enhance the performance and efficiency of their electronic designs. Proper handling and thermal management are crucial for optimal operation in demanding environments.

Features

The 2SK3557-6-TB-E is an N-channel MOSFET designed for power switching applications. Key features include:
- Voltage Rating: The device can handle a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications in power management.
- Current Rating: It has a continuous drain current (I_D) rating of 45A, providing efficient current handling for high-power applications.
- R_DS(on): The on-resistance is low, typically around 0.05 ohms, which helps in minimizing power losses during operation.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for effective switching with low drive voltages.
- Package Type: The device typically comes in a TO-220 package, offering good thermal performance and ease of mounting.
- Applications: Ideal for use in DC-DC converters, motor drivers, and other power electronic circuits.
These features make the 2SK3557-6-TB-E suitable for applications requiring efficient power control and management.

Package

The 2SK3557-6-TB-E is packaged in a TO-220 format. This package type is a standard for power transistors, providing good thermal performance and ease of mounting to heatsinks.

Pinout

The 2SK3557-6-TB-E is an N-channel MOSFET with a total of 4 pins. Its pin configuration is as follows:
1. Gate (G) - The control terminal for the MOSFET, used to turn the device on and off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is in the on state.
3. Source (S) - The terminal through which current enters the MOSFET; it is connected to the ground or the negative side of the circuit.
4. Substrate (Body) - Typically connected to the source internally, it helps in device operation.
This MOSFET is used in various applications, including power management, voltage regulation, and switching applications, due to its high-speed operation and low on-resistance characteristics. Always refer to the specific datasheet for detailed electrical characteristics and ratings.

Manufacturer

The 2SK3557-6-TB-E is manufactured by Toshiba Corporation, a multinational conglomerate based in Japan. Toshiba operates in various sectors, including electronics, electrical equipment, and information technology. The company is well-known for its innovations in semiconductor technology, storage devices, and consumer electronics. Toshiba has a strong presence in the semiconductor market, producing a range of products including transistors, diodes, and integrated circuits, which are essential components in various electronic devices.

Application

The 2SK3557-6-TB-E is a high-power N-channel MOSFET commonly used in applications such as power amplifiers, motor drives, and power supply circuits. It is suitable for switching and amplification in consumer electronics, industrial equipment, and automotive systems. Its high efficiency and low on-resistance make it ideal for high-frequency and high-current applications.

Equivalent

The 2SK3557-6-TB-E is an N-channel MOSFET. Equivalent products include the 2SK3557, IRF840, and IPP50R199CP. However, always check the specific electrical characteristics and package types to ensure compatibility for your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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