2SK1058-E

Les images sont à titre de référence seulement

2SK1058-E

MOSFET N-CH 160V 7A TO3P

  • Fabricant
  • Mfr. Partie #2SK1058-E
  • Paquet TO-3P-3
  • Fiche de données
  • En stock3186

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 160 V
Current-ContinuousDrain(Id)@25°C 7A (Ta)
Vgs(Max) ±15V
InputCapacitance(Ciss)(Max)@Vds 600 pF @ 10 V
PowerDissipation(Max) 100W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3P

Vue d'ensemble

Description

The 2SK1058-E is an N-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in power electronic applications. It is designed for high-speed switching and features a low on-resistance, making it suitable for various applications such as power supplies, inverters, and motor drivers.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 60V, continuous drain current (I_D) of about 15A, and a low gate threshold voltage (V_GS(th)), allowing for efficient operation with low gate drive voltage. Its compact package design enhances thermal performance and minimizes space requirements on PCBs.
The 2SK1058-E is favored for its reliability, efficiency, and ease of integration into existing circuitry. It is crucial for engineers and designers to refer to the specific datasheet for detailed electrical characteristics, thermal management guidelines, and application notes to optimize performance in their designs.

Features

The 2SK1058-E is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Low On-Resistance (R_DS(on)): Ensures efficient power handling, reducing heat generation.
2. High Voltage Rating: Typically rated for 600V, making it suitable for high-voltage applications.
3. High-Speed Operation: Capable of fast switching speeds, ideal for power supply circuits and motor control.
4. Low Gate Charge: Allows for reduced drive power, enhancing efficiency in circuit designs.
5. Robust Package: Available in TO-220 or similar packages, facilitating effective heat dissipation.
6. Applications: Commonly used in power supplies, inverters, and other power management systems.
Overall, the 2SK1058-E is a reliable choice for engineers seeking high-performance MOSFETs in demanding applications.

Package

The 2SK1058-E is typically available in a TO-220 package type, which is a standard package for power transistors, allowing for good heat dissipation and easy mounting on heat sinks.

Pinout

The 2SK1058-E is an N-channel MOSFET typically used for power management applications. It has a total of 3 pins, which serve the following functions:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the output current flows out of the device. It connects to the load side of the circuit.
3. Source (S) - This pin is connected to the ground or negative side of the circuit. Current flows into the source from the drain when the MOSFET is activated.
The 2SK1058-E is characterized by its high-speed switching capabilities and is often employed in applications such as power supplies, motor drivers, and audio amplifiers. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.

Manufacturer

The 2SK1058-E is manufactured by Mitsubishi Electric Corporation, a well-known Japanese multinational company. Mitsubishi Electric is a major player in the electronics and electrical equipment industry, specializing in a wide range of products and services including semiconductors, industrial automation, telecommunications, and consumer electronics. Founded in 1921, the company focuses on innovation and technology development, providing solutions for various sectors such as energy, transportation, and infrastructure. Mitsubishi Electric is recognized for its commitment to quality and sustainability in its manufacturing processes.

Application

The 2SK1058-E is an N-channel MOSFET primarily used in power applications. Its key areas include switching power supplies, motor drivers, audio amplifiers, and various industrial automation systems. It's suitable for high-speed switching and can handle significant voltage and current, making it ideal for power management and control circuits in consumer electronics and industrial equipment.

Equivalent

The 2SK1058-E is a high-voltage N-channel MOSFET. Equivalent products include the 2SK1058, IRF840, and MTP50N06E. Always check the specific datasheets for voltage, current ratings, and package types to ensure compatibility for your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire