2N7002W

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2N7002W

MOSFET SOT323 N 60V 13.5OHM

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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 24.5 pF @ 20 V
Power Dissipation (Max) 280mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-3 (SOT323)
Package / Case SC-70, SOT-323
Base Product Number 2N7002

Vue d'ensemble

Description

The 2N7002W is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) commonly used in electronic circuits for switching and amplification applications. It features low on-resistance, high-speed switching, and low gate threshold voltage, making it suitable for low-power applications.
Key characteristics include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 200mA. The device is capable of handling moderate power levels, typically used in battery-powered devices, LED drivers, and low-voltage switching applications.
The 2N7002W is housed in a surface-mount package, facilitating easy integration into compact circuit designs. It operates efficiently with a gate voltage (V_GS) as low as 2V, making it ideal for interfacing with microcontrollers and other logic-level devices.
Overall, the 2N7002W is a versatile and reliable component in modern electronics, especially for switching applications where compact size and efficiency are crucial.

Features

The 2N7002W is an N-channel MOSFET primarily used for low-voltage switching applications. Key features include:
1. Voltage Rating: Drain-source voltage (V_DS) up to 60V, making it suitable for a variety of applications.
2. Current Handling: Continuous drain current (I_D) can reach up to 300 mA, allowing for efficient control of loads.
3. Low On-Resistance: Typically exhibits a low R_DS(on), resulting in minimal power loss and heat generation during operation.
4. Fast Switching Speed: Designed for rapid switching, enhancing performance in high-frequency applications.
5. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) enables operation with lower gate drive voltages.
6. Package: Available in a compact SOT-23 package, facilitating space-efficient designs.
7. Applications: Commonly used in low-side switching, signal switching, and as a level-shifter in digital circuits.
These features make the 2N7002W a versatile choice for various electronic and power management applications.

Package

The 2N7002W is typically packaged in a SOT-23 surface mount package. It is a small, 3-lead package suitable for space-constrained applications, providing efficient thermal and electrical performance.

Pinout

The 2N7002W is an N-channel MOSFET, specifically designed for low-voltage applications. It has a total of 4 pins, which are typically configured as follows:
1. Gate (G): This pin controls the MOSFET's operation; applying a voltage to it allows current to flow between the drain and source.
2. Drain (D): This pin is where the output current flows out of the device.
3. Source (S): This pin is where the current enters the device.
4. Body (B): This is usually internally connected to the source and may not be used as a separate pin in typical applications.
The 2N7002W is widely used in switching applications, signal amplification, and as a low-side switch due to its efficient performance in handling low-power loads. Its compact package and favorable electrical characteristics make it suitable for various electronic circuits.

Manufacturer

The 2N7002W is a product manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET devices, focusing on high-performance and reliable components for various applications, including automotive, industrial, and consumer electronics. The company was formed as a spin-off from NXP Semiconductors and is known for its commitment to quality and innovation in the semiconductor industry.

Application

The 2N7002W is an N-channel MOSFET primarily used in low-power switching applications. Its key application areas include:
1. Digital Switching: Used in microcontroller interfacing for on/off control.
2. Relay Replacement: Acts as a solid-state relay for low-current loads.
3. Signal Amplification: For amplifying weak signals in various circuits.
4. LED Drivers: Controls LED brightness in lighting applications.
5. Power Management: Used in power routing and voltage regulation circuits.
These applications leverage the device's low on-resistance and fast switching capabilities.

Equivalent

The 2N7002W is a N-channel MOSFET. Equivalent products include the 2N7000, BS170, and BSS123. Ensure to check specifications like voltage, current ratings, and package type to confirm compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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