MT52L256M32D1PF-107 WT:B

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MT52L256M32D1PF-107 WT:B

DRAM LPDDR3 8Gbit 32 178/221 VFBGA 1 WT

  • FabricantMicron
  • Mfr. Partie #MT52L256M32D1PF-107 WT:B
  • Paquet
  • Fiche de données
  • En stock2202

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Spécifications

Packaging Tray
Standard Pack Qty 1134

Vue d'ensemble

Description

The MT52L256M32D1PF-107 WT:B is a 2GB DDR3 SDRAM (Dynamic Random Access Memory) chip produced by Micron Technology. It features a 256M x 32-bit architecture, making it suitable for high-performance applications that require efficient data processing and storage.
Key specifications include:
- Density: 2 Gb (Gigabits)
- Organization: 256 Meg x 32 bits
- Speed: Operates at a data rate of 1066 MT/s (million transfers per second)
- Voltage: Typically operates at 1.5V
- Package Type: Offered in a compact package, suitable for various electronic designs.
The "WT:B" designation indicates the component's specific revision and indicates a part that is environmentally friendly, meeting RoHS (Restriction of Hazardous Substances) compliance standards.
This memory chip is commonly used in applications such as consumer electronics, mobile devices, and computing systems, enhancing performance and enabling faster data access speeds.

Features

The MT52L256M32D1PF-107 WT:B is a 256Mb (32MB) DRAM memory chip produced by Micron Technology. Key features include:
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic RAM).
2. Density: 256 Megabits organized as 8 bits x 32 (x4, x8, x16 configurations available).
3. Speed: Operates at a data rate of up to 1066 MT/s (megatransfers per second).
4. Interface: Supports a 1.5V power supply for low power consumption.
5. Package: Available in a compact, standard FBGA (Fine Ball Grid Array) package.
6. Latency: Offers low latency options suitable for various applications.
7. Temperature Range: Commercial temperature range, typically from 0°C to 85°C.
8. Applications: Suitable for consumer electronics, networking, and various computing applications.
This memory chip is designed for high-speed performance and efficiency, making it a popular choice for modern electronic devices.

Package

The MT52L256M32D1PF-107 WT:B is a DRAM chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for high-density applications, providing a compact footprint and efficient thermal performance.

Pinout

The MT52L256M32D1PF-107 WT:B is a DDR3 SDRAM memory chip with a pin count of 78. It is designed for high-performance memory applications, providing data storage with a density of 256 Megabits and a data width of 32 bits. The chip operates with a 1.5V supply voltage and supports data rates up to 1600 MT/s.
Key functions include:
- Data Storage: Provides dynamic random-access memory (DRAM) for applications needing temporary data storage.
- Data Transfer: Supports burst mode access to enhance data transfer rates.
- Control Signals: Includes pins for clock (CK), command (CMD), address (A), and data (DQ) signals, essential for memory operation.
- Power Management: Features pins for power and ground (VDD, VSS) to ensure proper operation and stability.
Overall, this chip is suitable for various applications, including computing and mobile devices, where efficient memory performance is required.

Manufacturer

The MT52L256M32D1PF-107 WT:B is manufactured by Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and industrial applications. The company is known for its innovation in memory technology, contributing to advancements in data storage and processing capabilities across various devices and industries.

Application

The MT52L256M32D1PF-107 WT:B is a DRAM memory chip primarily used in mobile devices, consumer electronics, and computing applications. Its high density and low power consumption make it suitable for smartphones, tablets, laptops, and other portable devices that require efficient memory solutions for multitasking and high-performance applications.

Equivalent

The MT52L256M32D1PF-107 WT:B chip is a 256Mb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83DFR
2. Samsung K4B4G0846E
3. Micron MT41K256M16HA-125
4. Nanya NT5CB256M16DP-133
Check specifications for compatibility based on timing, voltage, and package type.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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